“…Side-jump scattering has been observed in alloys such as AuTa [17], CuPt [18], in adding lighter impurities such as oxygen (O) and nitrogen (N) in host Pt via ion-implantation [19,20], and by introducing SrTiO 3 into Pt by sputtering [21]. Introduction of lighter impurities such as O and N in Pt, Ta by using sputtering [22,23], O in Pt by plasma irradiation [24], and Ar + and He + in Pt/Co/W stack [25] have also been exploited to enhance the SHE, but the quest to understand the underlying SHE mechanism remains challenging. Moreover, for the implementation of practical device applications, such as SOT magnetic random-access memory (SOT-MRAM), a trade-off between the θ SH and longitudinal resistivity, ρ xx is critical [19].…”