Charge–spin interconversion in nitrogen sputtered Pt via extrinsic spin Hall effect

Abstract

We experimentally investigate the charge-spin interconversion by introducing a lighter impurity, namely nitrogen (N) into Pt by varying the nitrogen gas flow rate, Q from 0 to 20 %, and studying the Onsager reciprocity of spin Hall effect (SHE) via complimentary methods of spin-torque ferromagnetic resonance (ST-FMR) and spin-pumping inverse spin Hall effect (SP-ISHE) measurements, respectively. We notice a reduction in the crystalline nature of Pt upon nitrogen incorporation. We observe the influence of extrinsic side-jump scattering induced SHE by measuring the spin Hall efficiency, θ_SH in a wide temperature range from 10-296 K. This work establishes the incorporation of N in Pt by using sputtering, to enhance the SHE via extrinsic scattering as well as to observe the reciprocal effects of charge-spin interconversion.

Realization of logic operations via spin–orbit torque driven perpendicular magnetization switching in a heavy metal/ferrimagnet bilayer

“…One possibility in this regard is to improve the spin Hall effect in the HM by methods such as ion implantation [22][23][24][25] and sputtering. 26 These challenges need to be addressed before spin logic devices, like those proposed in this work, can be ready for large scale production. In conclusion, this work presents a spin logic prototype, based on SOT driven switching in a HM/FiM bilayer, compatible with logic-in-memory architectures, for future commercial use.…”