Abstract:Zinc oxide (ZnO) is a remarkable inorganic semiconductor with exceptional piezoelectric properties compared to other semiconductors. However, in comparison to lead-based hazardous piezoelectric materials, its features have undesired limitations. Here we report the 5~6 folds enhancement in the piezoelectric properties via chemical doping of copper matched to intrinsic ZnO. The flexible piezoelectric nanogenerator (F-PENG) device was fabricated using an unpretentious solution process of spin coating with other a… Show more
“…The peak at 276 cm -1 is related to the B 2 s order mode with low intensity. The broad feature between 1100 and 1200 cm -1 is assigned to the two phonon modes (2LO), characteristic of II-IV semiconductors [8,50].…”
Section: Raman Spectroscopymentioning
confidence: 99%
“…Zinc oxide (ZnO) is known as an important semiconductor for its favorable properties as transparency [1], high electron mobility [2], wide band gap [3], tough room temperature [4] and luminescence [5]. In the last few years, there has been a growing interest of the researchers, focusing on the synthesis of nanocrystalline ZnO, hence, many methods, including sol-gel [6][7][8][9]. Thereby, particle size and crystal morphology play important roles in all applications, like nanodevices for opto-electronic [10], gas sensing [11], photocatalytic activity [12].…”
Zinc oxide nanoparticles (ZnO NPs) are prepared by sol-gel process, using both polyethylene glycol (PEG-400) as surfactant and propyltrimethoxysilane (PTMS) as capping agent. Surface modification is performed in situ procedure. The physical parameters such as strain and stress values are calculated via the Williamson-Hall plot (W&H) assuming a uniform deformation model (UDM) and uniform stress deformation model, and by the size and strain plot method (SSP). The results show that the crystallite size estimated from Scherrer's formula, (W&H), (UDM), (SSP) and the particle size estimated from DSL are inter-correlated, which confirm the small size and the isotropic nature of our ZnO NPs. The FTIR spectroscopy illustrates that PEG-400 and PTMS could be adsorbed at the ZnO NPs surface. The distinct emission peak in the blue band is located at 490 nm and E 2 (high) mode is situated at 436 cm -1 . Both results confirm the oxygen deficiency in the ZnO NPs.
“…The peak at 276 cm -1 is related to the B 2 s order mode with low intensity. The broad feature between 1100 and 1200 cm -1 is assigned to the two phonon modes (2LO), characteristic of II-IV semiconductors [8,50].…”
Section: Raman Spectroscopymentioning
confidence: 99%
“…Zinc oxide (ZnO) is known as an important semiconductor for its favorable properties as transparency [1], high electron mobility [2], wide band gap [3], tough room temperature [4] and luminescence [5]. In the last few years, there has been a growing interest of the researchers, focusing on the synthesis of nanocrystalline ZnO, hence, many methods, including sol-gel [6][7][8][9]. Thereby, particle size and crystal morphology play important roles in all applications, like nanodevices for opto-electronic [10], gas sensing [11], photocatalytic activity [12].…”
Zinc oxide nanoparticles (ZnO NPs) are prepared by sol-gel process, using both polyethylene glycol (PEG-400) as surfactant and propyltrimethoxysilane (PTMS) as capping agent. Surface modification is performed in situ procedure. The physical parameters such as strain and stress values are calculated via the Williamson-Hall plot (W&H) assuming a uniform deformation model (UDM) and uniform stress deformation model, and by the size and strain plot method (SSP). The results show that the crystallite size estimated from Scherrer's formula, (W&H), (UDM), (SSP) and the particle size estimated from DSL are inter-correlated, which confirm the small size and the isotropic nature of our ZnO NPs. The FTIR spectroscopy illustrates that PEG-400 and PTMS could be adsorbed at the ZnO NPs surface. The distinct emission peak in the blue band is located at 490 nm and E 2 (high) mode is situated at 436 cm -1 . Both results confirm the oxygen deficiency in the ZnO NPs.
“…ZnO is one of the most promising semiconducting materials, which has received significant attention owing to its unique and easily tunable physical and chemical properties [1–11]. It is known that the ZnO is an intrinsic n-type semiconductor.…”
The phosphorus-doped ZnO nanorods were prepared using hydrothermal process, whose structural modifications as a function of doping concentration were investigated using X-ray diffraction. The dopant concentration-dependent enhancement in length and diameter of the nanorods had established the phosphorus doping in ZnO nanorods. The gradual transformation in the type of conductivity as observed from the variation of carrier concentration and Hall coefficient had further confirmed the phosphorus doping. The modification of carrier concentration in the ZnO nanorods due to phosphorus doping was understood on the basis of the amphoteric nature of the phosphorus. The ZnO nanorods in the absence of phosphorus showed the photoluminescence (PL) in the range of the ultraviolet (UV) and visible regimes. The UV emission, i.e. near-band-edge emission of ZnO, was found to be red-shifted after the doping of phosphorus, which was attributed to donor-acceptor pair formation. The observed emissions in the visible regime were due to the deep level emissions that were aroused from various defects in ZnO. The Al-doped ZnO seed layer was found to be responsible for the observed near-infrared (NIR) emission. The PL emission in UV and visible regimes can cover a wide range of applications from biological to optoelectronic devices.
The goal of this paper is to review current methods of energy harvesting, while focusing on piezoelectric energy harvesting. The piezoelectric energy harvesting technique is based on the materials’ property of generating an electric field when a mechanical force is applied. This phenomenon is known as the direct piezoelectric effect. Piezoelectric transducers can be of different shapes and materials, making them suitable for a multitude of applications. To optimize the use of piezoelectric devices in applications, a model is needed to observe the behavior in the time and frequency domain. In addition to different aspects of piezoelectric modeling, this paper also presents several circuits used to maximize the energy harvested.
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