Mapping the structural, electrical, and optical properties of hydrothermally grown phosphorus-doped ZnO nanorods for optoelectronic device applications

Abstract

The phosphorus-doped ZnO nanorods were prepared using hydrothermal process, whose structural modifications as a function of doping concentration were investigated using X-ray diffraction. The dopant concentration-dependent enhancement in length and diameter of the nanorods had established the phosphorus doping in ZnO nanorods. The gradual transformation in the type of conductivity as observed from the variation of carrier concentration and Hall coefficient had further confirmed the phosphorus doping. The modification of carrier concentration in the ZnO nanorods due to phosphorus doping was understood on the basis of the amphoteric nature of the phosphorus. The ZnO nanorods in the absence of phosphorus showed the photoluminescence (PL) in the range of the ultraviolet (UV) and visible regimes. The UV emission, i.e. near-band-edge emission of ZnO, was found to be red-shifted after the doping of phosphorus, which was attributed to donor-acceptor pair formation. The observed emissions in the visible regime were due to the deep level emissions that were aroused from various defects in ZnO. The Al-doped ZnO seed layer was found to be responsible for the observed near-infrared (NIR) emission. The PL emission in UV and visible regimes can cover a wide range of applications from biological to optoelectronic devices.

Study of The Electrical, Optical and Morphological Properties in Submicron and Microstructured ZnO Thin Films Obtained by Spin Coating and Chemical Bath Deposition

“…In this it is observed that the emission centered at 387 nm is associated with the electronic transition Zn i0 → VB, emission centered at 395 nm with the CB → V Zn transition, emission centered at 411 nm at Zn i0 → V Zn electronic transition, the emission of 439 nm to the electronic transition Zn i → BV. The band centered at 602 nm at the CB → O zn and CB → O i transitions and nally, the band focused on 688 nm was associated with the electronic transitions Zn i → Ozn and Zn i → O i , which is consistent with what was reported Özgür et al (2005b) and recently by Siva et al (2019) . These latter observed a yellow band (574-587) nm that they associate with the presence of Oi and a band between (678-729) nm associated with excess oxygen or oxygen vacancies (V 0 ) sites.…”

Custom Synthesis of ZnO Nanowires for Efficient Ambient Air-Processed Solar Cells

“…These parameters were chosen from the optimum values described in the literature. − In order to optimize the morphology of the ZnONWs, the growth time was varied. A series of glass-ITO substrates containing ZnONWs were prepared at different times by fixing the following parameters: deposition of the seed layer by spin-coating with a thickness close to 10 nm, − ,− temperature at 90 °C, − ,, concentrations of [Zn­(NO 3 ) 2 ] = [HMTA] = 25 mM, reaction in an autoclave, and a medium volume of 15 mL. All the synthesis procedures under the chosen conditions resulted in controlled and reproducible nanowire growth.…”

“…For the optimization of the synthetic route of ZnONWs, the temperature, the precursors’ concentrations, pH, the thickness, and the producing method of the seed layer were fixed. These parameters were chosen from the optimum values described in the literature. − In order to optimize the morphology of the ZnONWs, the growth time was varied. A series of glass-ITO substrates containing ZnONWs were prepared at different times by fixing the following parameters: deposition of the seed layer by spin-coating with a thickness close to 10 nm, − ,− temperature at 90 °C, − ,, concentrations of [Zn­(NO 3 ) 2 ] = [HMTA] = 25 mM, reaction in an autoclave, and a medium volume of 15 mL.…”

“…The growth reaction of ZnONWs is a thermally activated reaction, considered to start at about 60 °C . The kinetics of this reaction yet depends on several parameters such as pressure, temperature, − ,, pH, , agitation, the amount of reagent/substrate interface, the presence of a catalyst, and concentration of the reagents during the course of the reaction . Although we chose to maintain the reaction parameters as constant as possible to study the sole effect of time, the chemical reaction itself alters the different factors over time.…”

Modulation of intrinsic defects in vertically grown ZnO nanorods by ion implantation

“…A wide variety of ZnO nanostructures having different morphological shapes and attractive electronic and optical properties can be grown using inexpensive synthesis methods. 11 The optical, electronic and magnetic properties of ZnO can be tuned by doping it with suitable elements 5,12–16 and also by controlled defect creation. 17–21 Semiconductors doped with magnetic impurities are known as dilute magnetic semiconductors (DMS).…”