Doping of tin disulfide (SnS 2 ) is an effective strategy to regulate its physical and chemical properties. In this work, In doping was used to manipulate the photoresponse behavior of SnS 2 -based photodetectors. In-doped SnS 2 nanosheets were synthesized via a facile hydrothermal method. It was found that the In doping concentration plays an important role in the size of the fabricated SnS 2 nanosheets. With the increase in the In doping concentration, the lateral size of samples increased from ∼210 to ∼420 nm, but the crystallinity became poor at higher concentrations. Energy dispersive X-ray-mapping results show that the In was homogeneously distributed in the samples. In addition, a red shift was observed in the binding energy of Sn and S with increased In doping concentration, which may be due to the p-type doping of In in SnS 2 . After In doping, the performance of SnS 2 -based photodetectors was significantly improved. The photoresponse speed of In-doped SnS 2 -based photodetectors was faster than that of pristine SnS 2 -based devices under the illumination of 532 and 405 nm lasers. This work develops an effective approach of In doping to enhance the photoresponse characteristics of SnS 2 -based photodetectors and proves that In-doped SnS 2 has a vast potential in optoelectronic applications.