Two
dimensional (2D) tin disulfide (SnS2) has attracted
growing interest as a promising high performance photodetector with
superior performance such as fast response time, high responsivity,
and good stability. However, SnS2-based photodetectors
still face great challenges, and the photodetection performance needs
to be improved for practical applications. Herein, indium-doped SnS2 (In-SnS2) few layers were exfoliated from CVT-grown
single crystals, which were synthesized by chemical vapor transport.
Photodetectors based on In-SnS2 few layers were fabricated
and detected. Compared with photodetectors based on pristine SnS2, photodetectors based on In-SnS2 few layers exhibited
better photodetection performances, including higher responsivities,
higher external quantum efficiencies, and greater normalized detectivities.
The responsivity (R), external quantum efficiency
(EQE), and normalized detectivity (D*) were increased
by up to 2 orders of magnitude after In doping. Considering responsivity
and response time, the photodetector based on 1.4 at. % In-SnS2 few layers exhibited an optimal photodetection performance
with a high R of 153.8 A/W, a high EQE of 4.72 ×
104 %, a great D* of 5.81 × 1012 Jones, and a short response time of 13 ms. Our work provides
an efficient path to enhance photodetection performances of photodetectors
based on SnS2 for future high-performance optoelectronic
applications.