2017
DOI: 10.1007/s10854-017-7181-2
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Enhancement of silicon nanowire opto-electric properties by combining acid vapor etching and lithium pore-filling

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Cited by 4 publications
(10 citation statements)
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“…(2) Bi treatment leads to a reduction in the deep trap density and quenches a large part of the silicon dangling bands generated during the etching process for SiNW formation. Thus, a passivation of the non-radiative centers occurs via the substitution of the unstable Si–H bands by the stable Bi–O–Si bands, Bi–OH, and other carbon-based functional groups, as revealed from the FTIR analysis [ 13 ]. (3) A possible increase in the density and/or creation of new radiative centers under the photo excitation of the charge carrier generated from the Bi deposits.…”
Section: Resultsmentioning
confidence: 99%
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“…(2) Bi treatment leads to a reduction in the deep trap density and quenches a large part of the silicon dangling bands generated during the etching process for SiNW formation. Thus, a passivation of the non-radiative centers occurs via the substitution of the unstable Si–H bands by the stable Bi–O–Si bands, Bi–OH, and other carbon-based functional groups, as revealed from the FTIR analysis [ 13 ]. (3) A possible increase in the density and/or creation of new radiative centers under the photo excitation of the charge carrier generated from the Bi deposits.…”
Section: Resultsmentioning
confidence: 99%
“…Amri et al show that the passivation of SiNWs with lithium not only improves the luminescence but also ensure a long PL lifetime. [ 13 ]. Herein, the Bi coating on SiNWs achieves an interesting PL enhancement, reaching a factor of nine-fold, as seen above, as well as the stabilization of the NW structure, which is very interesting and promising for nanoscale optoelectronic devices.…”
Section: Resultsmentioning
confidence: 99%
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