Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene

Abstract

Resistive random access memory (ReRAM) devices have been extensively investigated resulting in significant enhancement of switching properties. However fluctuations in switching parameters are still critical weak points which cause serious failures during ‘reading’ and ‘writing’ operations of ReRAM devices. It is believed that such fluctuations may be originated by random creation and rupture of conducting filaments inside ReRAM oxides. Here, we introduce defective monolayer graphene between an oxide film and an electrode to induce confined current path distribution inside the oxide film, and thus control the creation and rupture of conducting filaments. The ReRAM device with an atomically thin interlayer of defective monolayer graphene reveals much reduced fluctuations in switching parameters compared to a conventional one. Our results demonstrate that defective monolayer graphene paves the way to reliable ReRAM devices operating under confined current path distribution.

Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices

“…Traditionally RRAMs were made of a transition metal oxide (TMO, such as HfO 2 , Al 2 O 3 or ZnO) sandwiched between two metallic electrodes (Pt, Ti, Ni, Cu), but recent developments started to include 2D layered materials [8][9][10][11][17][18][19][20][21][22][23][24][25][26][27]. Graphene has been used as electrode to provide the devices with flexibility [28] and transparency [29], block atomic interactions, and concentrate the dielectric breakdown (BD) at specific locations [30]; other 2D layered materials like graphene oxide (GO) [31,32], MoS 2 [33,34], and black phosphorous (BP) [35] have been used as resistive switching (RS) medium. Despite these prototypes successfully showed RS, GO is far from being a stable insulator: e.g.…”

Mechanisms and Modeling of 2d-Materials-Based Resistive Random Access Memory Devices (Invited Review)

“…8 [29]. The specific defects in the graphene monolayer are generated by Ar + ion assisted reaction system, inducing broken C-C bonds [29].…”

“…8 [29]. The specific defects in the graphene monolayer are generated by Ar + ion assisted reaction system, inducing broken C-C bonds [29]. The growing region of conductive filament can be controlled by inducing confirmed current path distribution in the oxide.…”

“…In 2013, Tian et al proposed a low power consumption RRAM with singlelayer graphene inserted between TiN/Ti electrode and oxide [28]. In 2015, Lee et al inserted a defective graphene layer between oxide film and metal electrode to control the formation and rupture of conductive filament [29]. In 2015, Lee et al proposed a GE-RRAM to improve the performance [30].…”

Research progresses of resistive random access memory

“…器件从而提高及拓展器件性能的想法正越来越受到 研究人员的重视 [155][156][157][158] . 石墨烯通常可以用作RRAM 的 电 极 [159][160][161] 、 纳 米 尺 寸 电 极 [162,163] 或 者 侧 边 电 极 (图5) [164,165] , 也可以用作电极与阻变层之间的界面插 层 [166][167][168][169] , 具有纳米孔洞的石墨烯可以用来实现导电 细丝的限域生长 [170,171] , 还可以通过在石墨烯中形成纳 米缝隙构造RRAM器件 [172] . 石墨烯RRAM器件的主要 叠能力.…”