Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

Akiyama, Morito; Kamohara, Toshihiro; Kano, Kazuhiko; Teshigahara, Akihiko; Takeuchi, Yukihiro; Kawahara, Nobuaki

doi:10.1002/adma.200802611

Cited by 768 publications

(528 citation statements)

References 23 publications

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“…8 Furthermore, its piezoelectric response has a high temperature stability, up to 1150 • C. The major drawback of wurtzite AlN is that it exhibits a low piezoelectric moduli (d ij ) around 5.5 pCN −1 in comparison to 410 pCN −1 of PZT. 9 Sc x Al 1−x N alloys were found to have a giant ≈ 600% increase of the piezoelectric moduli d 33 at around x = 0.5, in reference to pure wurtzite AlN. 9,10 The microscopic physical origin of this anomalous increase was explained by the flattening of the potential energy landscape, which results simultaneously in elastic softening and local structural instability.…”

Section: Introductionmentioning

confidence: 99%

“…9 Sc x Al 1−x N alloys were found to have a giant ≈ 600% increase of the piezoelectric moduli d 33 at around x = 0.5, in reference to pure wurtzite AlN. 9,10 The microscopic physical origin of this anomalous increase was explained by the flattening of the potential energy landscape, which results simultaneously in elastic softening and local structural instability. 10 This generic phenomena was later validated also for ferroelectric materials, in relaxor oxides, in the context of morphotropic phase boundaries (MPB).…”

Section: Introductionmentioning

confidence: 99%

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Volume matching condition to establish the enhanced piezoelectricity in ternary (Sc,Y)0.5(Al,Ga,In)0.5N alloys

et al. 2013

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Recently, ScAlN alloys attracted attention for their giant piezoelectric moduli. In this study the piezoelectric response of the wurtzite group-III nitrides AlN, GaN, and InN mixed with 50 mol% of ScN or YN is investigated using ab initio calculations. We confirm that the energy flattening phenomenon gives rise to the simultaneous appearance of elastic softening and local structural instability, and explains the enhanced piezoelectricity of the alloys. Furthermore, we present a volume matching condition for an efficient search of new piezoelectric materials. It states that alloys in which the parent components show close volume matching exhibit a flatter potential-energy landscape and higher increase of piezoelectric moduli. We suggest YInN, beyond ScAlN, as a promising material for piezoelectric energy harvesting with its enhanced ≈400% piezoelectric moduli.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Volume matching condition to establish the enhanced piezoelectricity in ternary (Sc,Y)0.5(Al,Ga,In)0.5N alloys

et al. 2013

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“…A 400% increase in piezoelectric response for x=0.43 [1] as well as an improved electromechanical coupling (kt 2 ) [2][3][4][5] make this material a potential alternative to the commonly used pure AlN in telecommunication industry [6]. The anomalously large piezoelectric modulus d33 of ScxAl1-xN was proposed to be related to softening of the material caused by a competition between Sc and Al atoms for the bonding coordination of nitrogen, due to a metastable layered hexagonal phase of ScN [7].…”

Section: Introductionmentioning

confidence: 99%

Stabilization of wurtzite Sc0.4Al0.6N in pseudomorphic epitaxial Sc Al1−N/In Al1−N superlattices

et al. 2015

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Pseudomorphic stabilization in wurtzite ScxAl1-xN/AlN and ScxAl1-xN/InyAl1-yN superlattices (x=0.2, 0.3, and 0.4; y=0.2-0.72), grown by reactive magnetron sputter epitaxy was investigated. X-ray diffraction and transmission electron microscopy show that in ScxAl1-xN/AlN superlattices the compressive biaxial stresses due to positive lattice mismatch in Sc0.3Al0.7N and Sc0.4Al0.6N lead to the loss of epitaxy, although the structure remains layered.For the negative lattice mismatched In-rich ScxAl1-xN/InyAl1-yN superlattices, a tensile biaxial stress promotes the stabilization of wurtzite ScxAl1-xN even for the highest investigated concentration x=0.4. Ab initio calculations with fixed in-plane lattice parameters show a reduction in mixing energy for wurtzite ScxAl1-xN under tensile stress when x≥0.375 and corroborate the experimental results.

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“…[6][7][8] Here, we consider the solid solutions of c-ScN and c-AlN in Sc 1−x Al x N, where Sc and Al are positioned on the metal sublattice and 0 Յ x Յ 1. The Sc-Al-N material system is, in comparison to the related systems mentioned, almost unexplored, with the perovskite Sc 3 AlN as the only reported ternary phase 9 and a brief report about an enhanced piezoelectric response in hexagonal Sc 1−x Al x N. 10 Group IIIA semiconducting w-AlN, with physical properties including wide energy band gap ͑6.2 eV͒, 11 high hardness ͑Ͼ20 GPa͒, 12,13 high thermal conductivity ͑3.19 W / cm K at RT͒, 14 and high-temperature stability ͑melting point of Ͼ2000°C͒, 15 has been extensively studied mainly for optical and electronic device applications. The metastable cubic AlN polytypes ͑c and zb͒ are less explored due to the difficulties to synthesize them in a pure form.…”

Section: Introductionmentioning

confidence: 99%

Cubic Sc1−xAlxN solid solution thin films deposited by reactive magnetron sputter epitaxy onto ScN(111)

Höglund

Bareño

Birch

et al. 2009

Journal of Applied Physics

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Reactive magnetron sputter epitaxy was used to deposit thin solid films of Sc1−xAlxN (0≤x≤1) onto MgO(111) substrates with ScN(111) seed layers. Stoichiometric films were deposited from elemental Sc and Al targets at substrate temperatures of 600 °C. The films were analyzed by Rutherford backscattering spectroscopy, elastic recoil detection analysis, x-ray diffraction, and transmission electron microscopy. Results show that rocksalt structure (c)-Sc1−xAlxN solid solutions with AlN molar fractions up to ∼60% can be synthesized. For higher AlN contents, the system phase separates into c- and wurtzite structure (w)-Sc1−xAlxN domains. The w-domains are present in three different orientations relative to the seed layer, namely, Sc1−xAlxN(0001)∥ScN(111) with Sc1−xAlxN[1¯21¯0]∥ScN[11¯0], Sc1−xAlxN(101¯1)∥ScN(111) with Sc1−xAlxN[1¯21¯0]∥ScN[11¯0], and Sc1−xAlxN(101¯1)‖ScN(113). The results are compared to first-principles density functional theory calculations for the mixing enthalpies of c-, w-, and zinc blende Sc0.50Al0.50N solid solutions, yielding metastability with respect to phase separation for all temperatures below the melting points of AlN and ScN.

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Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

Cited by 768 publications

References 23 publications

Volume matching condition to establish the enhanced piezoelectricity in ternary (Sc,Y)0.5(Al,Ga,In)0.5N alloys

Volume matching condition to establish the enhanced piezoelectricity in ternary (Sc,Y)0.5(Al,Ga,In)0.5N alloys

Stabilization of wurtzite Sc0.4Al0.6N in pseudomorphic epitaxial Sc Al1−N/In Al1−N superlattices

Cubic Sc1−xAlxN solid solution thin films deposited by reactive magnetron sputter epitaxy onto ScN(111)

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