Enhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer deposition

Sun, Edward; Su, Fu-Hsiang; Chen, Ching-Huang; Chen, Miin-Jang

doi:10.1016/j.apsusc.2010.03.047

Cited by 8 publications

(4 citation statements)

References 16 publications

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“…Around 100–150 K, an anomalous increase in the integrated PL curve for both passivated samples a 2 and b 2 is observed. A similar abnormal increase of PL intensity around 110 K has been reported on Si with Al 2 O 3 passivation, resulting from the thermal activation of bound excitons into free excitons and the subsequent release of deep-level electrons 51,52 . For porous SiC with ALD passivation, it can be interpreted as the increased carrier mobility and thermal activation of bound excitons, which can enhance the amount of carriers captured by the radiative surface states 30,53 .…”

Section: Experiments and Resultssupporting

confidence: 74%

Temperature-dependent photoluminescence properties of porous fluorescent SiC

Tarekegne

et al. 2019

Sci Rep

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A comprehensive study of surface passivation effect on porous fluorescent silicon carbide (SiC) was carried out to elucidate the luminescence properties by temperature dependent photoluminescence (PL) measurement. The porous structures were prepared using an anodic oxidation etching method and passivated by atomic layer deposited (ALD) Al2O3 films. An impressive enhancement of PL intensity was observed in porous SiC with ALD Al2O3, especially at low temperatures. At temperatures below 150 K, two prominent PL emission peaks located at 517 nm and 650 nm were observed. The broad emission peak at 517 nm was attributed to originate from the surface states in the porous structures, which was supported by X-ray photoelectron spectra characterization. The emission peak at 650 nm is due to donor-acceptor-pairs (DAP) recombination via nitrogen donors and boron-related double D-centers in fluorescent SiC substrates. The results of the present work suggest that the ALD Al2O3 films can effectively suppress the non-radiative recombination for the porous structures on fluorescent SiC. In addition, we provide the evidence based on the low-temperature time-resolved PL that the mechanism behind the PL emission in porous structures is mainly related to the transitions via surface states.

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Section: Experiments and Resultssupporting

confidence: 74%

Temperature-dependent photoluminescence properties of porous fluorescent SiC

Tarekegne

et al. 2019

Sci Rep

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“…The hydrogen atoms are usually bonded to the excess oxygen atoms and form -OH groups. 12,[15][16][17][18] It was observed that the passivation performance of ALD Al 2 O 3 can be activated by a post-annealing process. 19 The surface passivation performance of Al 2 O 3 lms was found to depend on several conditions, i.e.…”

Section: Introductionmentioning

confidence: 99%

Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al₂O₃

Iwasa

et al. 2017

RSC Adv.

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“…This was recently also demonstrated for Al 2 O 3 -coated Si nanodots. 36 The PL data can be compared with the surface recombination velocity, S eff . An upper level of S eff can be determined directly from the effective lifetime (s eff ) of the minority carriers in a FZ Si wafer by assuming that all recombination takes place at the surfaces.…”

Section: Si Luminescence and Surface Passivationmentioning

confidence: 99%

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Dingemans

Clark²,

Delft

et al. 2011

Journal of Applied Physics

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Atomic layer deposition was used to deposit amorphous Er-doped Al2O3 films (0.9–6.2 at. % Er) on Si(100). The Er3+ photoluminescence (PL), Er3+ upconversion luminescence, as well as the Si PL and associated surface passivation properties of the films were studied and related to the structural change of the material during annealing. The PL signals from Er3+ and Si were strongly dependent on the annealing temperature (T = 450–1000 °C), but not directly influenced by the transition from an amorphous to a crystalline phase at T > 900 °C. For T > 650 °C, broad Er3+ PL centered at 1.54 μm (4I13/2) with a full width at half maximum of 55 nm was observed under excitation of 532 nm light. The PL signal reached a maximum for Er concentrations in the range of 2–3 at. %. Multiple photon upconversion luminescence was detected at 660 nm (4F9/2), 810 nm (4I9/2), and 980 nm (4I11/2), under excitation of 1480 nm light. The optical activation of Er3+ was related to the removal of quenching impurities, such as OH (3 at. % H present initially) as also indicated by thermal effusion experiments. In contrast to the Er3+ PL signal, the Si luminescence, and consequently the Si surface passivation, decreased for increasing annealing temperatures. This trade-off between surface passivation quality and Er3+ PL can be attributed to an opposite correlation with the decreasing hydrogen content in the films during thermal treatment.

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Enhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer deposition

Cited by 8 publications

References 16 publications

Temperature-dependent photoluminescence properties of porous fluorescent SiC

Temperature-dependent photoluminescence properties of porous fluorescent SiC

Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al₂O₃

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

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Enhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer deposition

Cited by 8 publications

References 16 publications

Temperature-dependent photoluminescence properties of porous fluorescent SiC

Temperature-dependent photoluminescence properties of porous fluorescent SiC

Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

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Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al₂O₃