2020
DOI: 10.1016/j.optmat.2020.110396
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Enhancement of optoelectronic parameters of Nd-doped ZnO nanowires for photodetector applications

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Cited by 149 publications
(78 citation statements)
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“…Doni Pon et al [56], reported Al doped ZnO thin film has the detectivity value in the order of 1.70 × 10 11 Jones. Poul Raj et al [57], demonstrated Nd doped ZnO thin films showed maximum detectivity value 1.18 × 10 11 Jones which is comparable to the present work. The external quantum efficiency (EQE) of the prepared thin films was determined by using the given relation:…”
Section: Photo-sensing Analysissupporting
confidence: 90%
“…Doni Pon et al [56], reported Al doped ZnO thin film has the detectivity value in the order of 1.70 × 10 11 Jones. Poul Raj et al [57], demonstrated Nd doped ZnO thin films showed maximum detectivity value 1.18 × 10 11 Jones which is comparable to the present work. The external quantum efficiency (EQE) of the prepared thin films was determined by using the given relation:…”
Section: Photo-sensing Analysissupporting
confidence: 90%
“…The geopolymer bonds are highly stable up to 800°C. [92][93][94][95][96][97] Because of all of these reasons, the number of pores in synthetic geopolymers was significantly reduced. The acceleration of pore volume reduction and water loss in the geopolymer as a result of evaporation and dihydroxylation that occurs during a thermal assault can lead to the formation of structural faults or the expansion of existing faults.…”
Section: Microstructural Analysismentioning
confidence: 99%
“…The important characteristics for evaluating the performance of a photodetector device are photosensitivity (P s ), responsiveness (R * ), detectivity (D * ), and external quantum efficiency (EQE) [43,44]. The enhancement of current known as the photocurrent (I p ) is the difference between current under light and dark.…”
Section: Photoconductive Effectmentioning
confidence: 99%