Enhancement of metal-insulator transition performance of VO2 thin films by conventional furnace annealing

A comparative study of the thermochromic performances of VO2 films obtained by air oxidation of V and VN precursors

“…It is significant to note that in our previous work on silicon substrates, a similar limit in the amplitude of the resistivity switch was also observed [41]. Liang et al [40] achieve interesting improvements in ∆𝑅 by applying two successive annealings (rapid thermal annealing followed by conventional annealing at lower temperature) to increase the grain size of the obtained VO2 grains.…”

“…However, an accurate control of the coupling temperature/oxidation duration (i.e. thermal oxidation of the vanadium precursor film) represents the most critical issue in the processing development for a given thickness of the initial vanadium layer precursor [29,32,[37][38][39][40]. Recently, we have demonstrated the possibility to take benefit of this two-stage strategy by air oxidizing sputter-deposited vanadium nitride (VN) thin films to achieve thermochromic VO2 films [41,42].…”

Infrared modulation via near-room-temperature phase transitions of vanadium oxides & core–shell composites

“…An example of this engineering is using structural changes utilizing oxide growth, compositional, and morphological techniques to tune IMT properties to alter the electrical switching speed, 12,13 as well as optical 14,15 and optoelectronic properties. 16,17 Therefore, the fundamental understanding of this structural impact on IMTs is important in order to engineer VO x polymorphs that are t for purpose. Methods such as using specially oriented substrates, 18 dopants, 19 and ion implantation 20 induce strain, meaning that the oxide requires less energy to transition from the insulator to the metallic state.…”

The mechanism of semiconductor to metal transition in the hydrogenation of VO2: a density functional theory study

“…31–33 Thus, a tremendous number of methods have been utilized to improve the phase transition properties and enhance the practical application potential of VO 2 . 4,34–37 Doping is a widely accepted effective approach to tune the phase transition temperature of VO 2 . 38–42 For example, Zhou et al reported that the metal–insulator transition temperature of Mg-doped VO 2 nanoparticles decreased by approximately 2 K per at% Mg, and the phase transition temperature of VO 2 with 7.0 at% Mg decreased to 54 °C.…”