Enhancement of DRAM Performance by Adopting Metal–Interlayer–Semiconductor Source/Drain Contact Structure on DRAM Cell

Son, Muyeong; Jung, Seung-Geun; Kim, Seunghwan; Park, Euyjin; Lee, Sul-Hwan; Yu, Hyun‐Yong

doi:10.1109/ted.2021.3066140

Cited by 8 publications

(5 citation statements)

References 25 publications

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“…Currently, DRAM (Dynamic random access memory), which is widely used for computers and mobile electronic devices, is rapidly being scaled down. 1,2 As scale down has progressed, the structure of the transistor has changed from the traditional planar structure to the buried tungsten cell array transistor structure, and the capacitor has also changed to a cylindrical structure to expand the cross sectional area. 3,4 In addition, in the case of capacitors, a MIM structure is used to improve characteristics, as opposed to the SIS structure (Silicon/ Insulator/Silicon) & MIS (Metal/Insulator/Silicon) structure, where SiO 2 thin film is formed on the interface.…”

mentioning

confidence: 99%

Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO₂Thin Film for Dielectric in DRAM Capacitor

Kim

Choi

Lee³

et al. 2021

ECS J. Solid State Sci. Technol.

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We researched the reduction of leakage current by Al doping in TiO 2 thin film. During the TiO 2 thin film deposition process, Al 2 O 3 thin film deposition was used for Al doping. XPS analysis showed that the greater the amount of Al doping in TiO 2 thin film, the fewer oxygen vacancies were found. The n-type characteristic of TiO 2 thin films is reduced as oxygen vacancies are reduced. An anatase (211) peak was detected by GIXRD analysis, and crystallinity was reduced with greater Al doping; the full width half maximum showed the crystalline size was reduced. UV-visible analysis showed the energy bandgap increased as the crystalline size became smaller, and I-V measurements showed the current density decreased to 3 × 10 −4 A cm −2 (As-dep TiO 2 : 10 −1 A cm −2 ) with Al doping. The dielectric constant remained above 20 even when doped with Al, confirming the superior properties of Al-doping TiO 2 thin film over conventional TiO 2 thin films.

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confidence: 99%

Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO₂Thin Film for Dielectric in DRAM Capacitor

Kim

Choi

Lee³

et al. 2021

ECS J. Solid State Sci. Technol.

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“…This graph shows that current generates at the p-n junction in both samples, but the pump laser does not reach the junction depth of Sample C sufficiently, so the generated current is small. It is well known that electrical field generated by terahertz wave is proportional to the amount of change in current and the equation is in the following; (1) where J is photocurrent, n and v are carrier density and velocity, respectively. μ, EB and Ip represents build-in electrical field and density of photon, respectively.…”

Section: Simulation Resultsmentioning

confidence: 99%

“…Technology enhancement for a dynamic random access memory (DRAM) leads to high capacity, high speed and low power consumption. Conventional plenary structure cannot meet requirement for future technology node due to its large current leakage and three dimensional structure has been adopted to overcome this issue [1]. The buried-channel-array transistor (BCAT) has been applied and scaling down the physical dimension is more critical due to its complexity.…”

Section: Introductionmentioning

confidence: 99%

Non-contact measurement of dopant depth profile with terahertz emission spectroscopy

Suzuki,

Murakami,

Baek

et al. 2024

Metrology, Inspection, and Process Control XXXVIII

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Depth profile of the dopant concentration in silicon substrate has a crucial influence on the electric characteristics that defines the device performance, whereas those profile has only been evaluated by destructive methods, most typically Secondary-Ion Mass Spectrometry (SIMS). We applied Terahertz Emission Spectroscopy (TES) that exploits charge carrier drift within the built-in potential structure to p-n junction structure in order to non-destructively extract the information about carrier dynamics and consequently the dopant profile. We prepared samples composed of Boron doped region as a p-Si and Phosphor doped region as a n-Si with a different p-n junction depth, and the TES evaluation was conducted illuminating the pump beam with the wavelength of 400nm. The obtained signals exhibit a clear difference among each sample in spite of the junction depth difference of as small as 15nm. The depth sensitivity of TES measurement was also investigated by utilizing carrier dynamics simulation, and clearly indicates the sensitivity to dopant depth profile, which is consistent with experimental TES signal. These results suggest that TES technology is very promising as in-line dopant profile measurement tool which is currently unrealistic with existing technologies and expected to greatly enhance the process control capability.

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“…In Fig. 14(a), when the concentration of the interface trap is Nit = 5 × 10 10 /cm 2 , Nit = 5 × 10 11 /cm 2 , it shows a decrease in SN potential of 7.6% and 57.3%, respectively, compared to no trap at time = 1 s. Assume 90% of the SN potential as the minimum voltage that the sense amplifier can sense after charge sharing [33]. In this case, if the concentration of the interface traps increases by 10 times, the retention time decreases by approximately 80%.…”

Section: Annealing Effectsmentioning

confidence: 99%

Investigation Into the Degradation of DDR4 DRAM Owing to Total Ionizing Dose Effects

Lee,

Suh,

Ryu

et al. 2023

IEEE Access

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Total ionizing dose (TID) effects of gamma rays were investigated on DDR4 dynamic random access memory (DRAM) and analyzed using TCAD simulations. In this study, we considered the operating states, dose rates, temperatures, and annealing to analyze the impact of TID under different conditions. The worst degradation was observed in the operated state and at a low-dose rate because of the absence of an electrostatic barrier that reduced the possibility of interface trap formation under unbiased and high-dose rate conditions. At lower temperatures, the effects of radiation were mitigated by the reduced production of protons (H + ). In addition, the unbiased DRAM and high-temperature conditions are the fastest to recover during postirradiation annealing. In TCAD simulations, the retention time decreased with increasing temperature because the band-to-band tunneling (BTBT) generation increased. Furthermore, the retention time and row activation latency (tRCD) degraded as the concentration of the interface traps increased. This is because the interface traps caused leakage currents and hindered the flow of electrons.

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Enhancement of DRAM Performance by Adopting Metal–Interlayer–Semiconductor Source/Drain Contact Structure on DRAM Cell

Cited by 8 publications

References 25 publications

Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO₂Thin Film for Dielectric in DRAM Capacitor

Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO₂Thin Film for Dielectric in DRAM Capacitor

Non-contact measurement of dopant depth profile with terahertz emission spectroscopy

Investigation Into the Degradation of DDR4 DRAM Owing to Total Ionizing Dose Effects

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Enhancement of DRAM Performance by Adopting Metal–Interlayer–Semiconductor Source/Drain Contact Structure on DRAM Cell

Cited by 8 publications

References 25 publications

Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO2Thin Film for Dielectric in DRAM Capacitor

Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO2Thin Film for Dielectric in DRAM Capacitor

Non-contact measurement of dopant depth profile with terahertz emission spectroscopy

Investigation Into the Degradation of DDR4 DRAM Owing to Total Ionizing Dose Effects

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Product

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Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO₂Thin Film for Dielectric in DRAM Capacitor

Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO₂Thin Film for Dielectric in DRAM Capacitor