Enhancement of cyclotron mass in semiconductor quantum wells

Yang, M. J.; Lin‐Chung, P. J.; Shanabrook, B. V.; Waterman, James; Wagner, R. J.; Moore, W. J.

doi:10.1103/physrevb.47.1691

Cited by 46 publications

(24 citation statements)

References 19 publications

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“…The peak energy is 272 meV for the SQW as opposed to 205 meV for ''bulk'' InAs 0.78 Sb 0.22 . This implies that the confinement energy is 67 meV, 15,17 which is consistent with the expectation of small electron mass for InAs 1Ϫx Sb x . The peak energies for several 150 Å SQWs are included in Fig.…”

Section: ͓S0021-8979͑00͒03911-6͔supporting

confidence: 87%

Section: Performing Organization Name(s) and Address(es)mentioning

confidence: 99%

“…Luminescence that peaks at 305 meV has been detected on this sample, originating from the recombination of electrons in the 100 Å InAs quantum well and holes in the 30 Å AlSb. The subband energies are calculated, respectively, to be 110 and 40 meV, where the nonparabolicity and wave function penetration effects 15 are considered. It is known that the InAs quantum well is fully strained to AlSb lattice ͑6.1355 Å͒ for a well thickness less than 200 Å.…”

Section: ͓S0021-8979͑00͒03911-6͔mentioning

confidence: 99%

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Photoluminescence of InAs1−xSbx/AlSb single quantum wells: Transition from type-II to type-I band alignment

Yang

Bennett

Fatemi

et al. 2000

Journal of Applied Physics

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Section: ͓S0021-8979͑00͒03911-6͔supporting

confidence: 87%

Section: Performing Organization Name(s) and Address(es)mentioning

confidence: 99%

Section: ͓S0021-8979͑00͒03911-6͔mentioning

confidence: 99%

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Photoluminescence of InAs1−xSbx/AlSb single quantum wells: Transition from type-II to type-I band alignment

Yang

Bennett

Fatemi

et al. 2000

Journal of Applied Physics

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“…Both peaks in Fig. 1(a) shift down in energy as N e increases, reflecting nonparabolicity in the conduction band, which gives a greater electron effective mass m ‫ء‬ CR at higher energies [14]. Although this can cause a splitting in CR, this effect is not the cause of the main splitting observed in Fig.…”

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confidence: 69%

Ground State of a Two-Dimensional Coupled Electron-Hole Gas inInAs/GaSbNarrow Gap Heterostructures

et al. 1999

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The contributions of wave function hybridization and spontaneous exciton formation to the ground state of closely spaced electron and hole gases in InAs͞GaSb heterostructures were investigated using cyclotron resonance (CR) spectroscopy. Strongly hybridized samples exhibit two electronlike CR absorptions at all perpendicular magnetic fields. The high frequency mode neither disappears at high temperatures ͑ϳ100 K͒ nor is affected by changes in electron or hole density, but is eliminated by a high parallel magnetic field ͑ϳ7 T͒. These effects can be understood as signatures of electron-hole wave function hybridization, and cannot be explained in terms of an excitonic gas.[S0031-9007(99)08733-5] PACS numbers: 73.20.Dx, 73.40.Kp, 78.66.Fd The formation of a thermodynamically stable excitonic ground state in a narrow gap semiconductor is a possible precursor to Bose-Einstein condensation in such systems. In order to achieve this, the band gap energy E g of the semiconductor must be smaller than the exciton binding energy E b , making it energetically favorable to spontaneously form excitons. To achieve E g , E b , InAs͞GaSb heterostructures have been proposed [1-3] because the gap between the InAs conduction band and the GaSb valence band can be tuned from ϳ 2150 meV to positive values [4]. Thus, the spontaneous formation of an excitonic gas might be realized using closely spaced InAs and GaSb quantum wells, containing two-dimensional electron and hole states, respectively. To achieve the large E b needed for experimental observation of such excitons, the distance between the gases should be minimized, maximizing the Coulombic attraction between the electrons and holes. Whether such an excitonic gas forms the ground state of the system depends on other competing mechanisms. In particular, as the interwell separation decreases, conduction and valence band wave function overlap results in hybridized states characterized by a new band gap energy D [4]. Additional considerations such as high and unequal extrinsic populations of electrons and holes may also inhibit exciton formation. Recent far-infrared (FIR) cyclotron resonance (CR) studies [5,6] of adjacent electron-hole gases in InAs͞Al x Ga 12x Sb heterostructures revealed two absorption peaks near the electron CR energy at x 0.1 and 0.2. These were not attributable to two occupied electron subbands as in early CR studies of InAs͞GaSb multiheterojunctions [7]. Instead, the lower energy peak was assigned to electron CR, and the higher energy peak to a cyclotron-shifted internal transition of a ground excitonic state. However, subsequent reinterpretation of these experimental results by other investigators [8,9] has suggested hybridized electron and hole Landau levels as a possible description. FIR CR spectroscopy is ideally suited to elucidate the nature of this ground state because it is a sensitive probe of the internal modes (e.g., 1s to 2p) of excitons [10] as well as wave function hybridization [11].In the present study, FIR CR spectroscopy is used to investigat...

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“…A lot of factors make the effective mass larger: an effective electron layer thickness smaller than L due to the band bending, band hybridization, strain for the lattice mismatch, and penetration of the electron wave function to the barriers. 18,19,21,28,29 In our experiments, the effective mass became larger with decreasing FIG. 8.…”

Section: B Inasõalsbõgasb Heterostructuresmentioning

confidence: 88%

Transport properties in asymmetric InAs/AlSb/GaSb electron-hole hybridized systems

2003

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Transport properties in asymmetric InAs/GaSb and InAs/AlSb/GaSb heterostructures sandwiched by AlGaSb layers were studied. For the InAs/GaSb structures, partially compensated quantum Hall effects arising from the electron-hole hybridization were observed. By changing the thickness of each layer, the energy positions of the conduction band and the valence band can be controlled independently. In InAs/AlSb/GaSb structures, we tried to control the hybridization strength by varying the AlSb barrier thickness. Magnetoresistance measurements, in which the magnetic field was applied perpendicular and parallel to the surface, and cyclotron resonance ͑CR͒ measurements show that there is a clear transition from the electron-hole-hybridized system to the electron-hole-independent system. The transition point appeared at around the 2-nm-barrier thickness in all experiments, suggesting a dominant role of the overlap of electron and hole wave functions. According to the absorption peak shapes in the CR measurements, the hybridized system can be further classified as strongly hybridized or weakly hybridized. Only in the weakly hybridized system was the Shubnikov-de Haas-like oscillation due to the short-range scattering by the hole potential observed in the electron CR absorption peak.

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Enhancement of cyclotron mass in semiconductor quantum wells

Cited by 46 publications

References 19 publications

Photoluminescence of InAs1−xSbx/AlSb single quantum wells: Transition from type-II to type-I band alignment

Photoluminescence of InAs1−xSbx/AlSb single quantum wells: Transition from type-II to type-I band alignment

Ground State of a Two-Dimensional Coupled Electron-Hole Gas inInAs/GaSbNarrow Gap Heterostructures

Transport properties in asymmetric InAs/AlSb/GaSb electron-hole hybridized systems

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