Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

Arulkumaran, S.; Egawa, Takashi; Matsui, Shinji; Ishikawa, Hiroyasu

doi:10.1063/1.1879091

Cited by 112 publications

(61 citation statements)

References 18 publications

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“…In the literature, GaN layers grown on silicon often show broad asymmetric peaks. The FWHM of the asymmetric (-1102) ω-scan is in the range of 1500-3000 arc sec [17][18][19], which is comparable with the values obtained from our AlGaN samples.…”

Section: Methodssupporting

confidence: 83%

AlGaN‐based heterostructures grown on 4 inch Si(111) by MOVPE

Cheng

Leys

Derluyn

et al. 2008

Phys. Status Solidi (c)

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AlGaN is an important material for ultra‐violet light emitters, photo detectors and high breakdown voltage switching devices. In this work, crack‐free AlxGa1‐xN (5% < x < 55%) layers up to 1.5 μm have been grown on 4 inch Si(111) using an AlN/AlyGa1‐yN (y > 70%) template. The structural quality of AlGaN layers is comparable to that of GaN layers grown on silicon(111). For Al0.16Ga0.84N, the FWHM of HR‐XRD (0002) and (‐1102) ω‐scan is around 650 arc sec and 1200 arc sec respectively. Based on this high quality AlGaN buffer, a double heterostructure (DH) FET was demonstrated. The sheet resistance of DH‐FET is 274 ± 4.7 Ω/□ and the uniformity value of 1.7% is also excellent. Some of the wafers have been processed. Devices with a gate length of 2 μm showed current density of 500 mA/mm and transconductance of more than 200 mS/mm. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodssupporting

confidence: 83%

AlGaN‐based heterostructures grown on 4 inch Si(111) by MOVPE

Cheng

Leys

Derluyn

et al. 2008

Phys. Status Solidi (c)

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“…[1][2][3] GaN growth on a Si substrate is one of the most useful methods for providing large-area GaN wafers at a low cost. [4][5][6][7][8] As aresult of several breakthroughs, 9,10 an AlGaN/GaN HEMT on Si demonstrated a breakdown voltage of over 1400 V. 10 Unfortunately, the large lattice and thermal expansion mismatches between Si and GaN produce high-density dislocations in a GaN layer.…”

Section: Introductionmentioning

confidence: 99%

Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

et al. 2016

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The behavior of dislocations in a GaN layer grown on a 4-inch Si(111) substrate with an AlGaN/AlN strained layer superlattice using horizontal metal-organic chemical vapor deposition was observed by transmission electron microscopy. Cross-sectional observation indicated that a drastic decrease in the dislocation density occurred in the GaN layer. The reaction of a dislocation (b=1/3[-211-3]) and anothor dislocation (b =1/3[-2113]) to form one dislocation (b =2/3[-2110]) in the GaN layer was clarified by plan-view observation using weak-beam dark-field and large-angle convergent-beam diffraction methods.

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“…11 In addition, the buffer layers were not specifically engineering for high blocking voltage operation, as the design of these buffer layers is known to significantly impact the breakdown voltage. 12 Integration of plasma enhanced chemical vapor deposition (PECVD) SiN 13 and PECVD SiO 2 surface passivation resulted in reduced blocking voltage, and will be investigated further as effective high voltage passivation layers is essential for optimal performance. Therefore to obtain higher breakdown voltages, thicker GaN layers and optimized buffer layers would be advantageous.…”

Section: Resultsmentioning

confidence: 99%

High Voltage GaN Lateral Photoconductive Semiconductor Switches

Koehler

Anderson

Khachatrian

et al. 2017

ECS J. Solid State Sci. Technol.

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High voltage (>4000 V) GaN lateral photoconductive semiconductor switches (PCSSs) were developed and characterized. The epitaxial structure consisted of 1.4 μm of semi-insulating GaN grown on a SiC substrate. Intrinsic mode operation, where above bandgap light is used to trigger the PCSS, results in the highest amount of photocurrent. These PCSSs can also be triggered in extrinsic mode, where sub-bandgap illumination excites carriers from extrinsic defect levels, but this results in a significantly lower photocurrent. Triggering at near bandgap with 10 V applied, the on-state photocurrent is over eight magnitudes higher than the dark off-state leakage, indicating extremely high responsivity. A 293 nm picosecond pulse width laser was used to determine the rise time of the PCSS to be ∼160 ps. Various geometry devices were fabricated, and the low voltage on-state current obeyed a linear trend as a function of perimeter/gap optically while optically gating the PCSS, which is analogous to the width/length of a metal oxide semiconductor field effect transistor. Off-state breakdown voltages >4000 V were achieved and were likely limited by the thickness of the GaN epitaxial layer. Wide bandgap photoconductive semiconductor switches (PCSSs), such as GaN PCSSs, have gained recent attention due to high critical electric field strength, high electron saturation velocity, and the ability to provide high power ultrafast devices.1 Previously, extrinsic mode, vertical GaN PCSSs were demonstrated on high resistivity freestanding hydride vapor phase epitaxy (HVPE) GaN substrates.2 However, operation of extrinsic mode PCSSs is governed by optical absorption at defect and/or impurity states located within the semiconductor's bandgap, resulting relatively low optical absorption and therefore low efficiency.3 But this low optical absorption translates into deep optical penetration, on the order of centimeters, which allows for vertical PCSS architectures. Intrinsic mode PCSSs rely on above excitation at or above the bandgap to promote electrons from the valence to conduction band, which can provide fast response time, but limits the penetration depth to only several microns, depending on the optical absorption of the semiconductor and the energy of the photons. This, however, also restricts intrinsic mode PCSSs to lateral architectures. Lateral devices can be easily scaled since the gap dimension is determined by photolithography rather than thick epitaxial growth.GaN PCSSs have previously been demonstrated on semi-insulating GaN achieved by Fe compensation doping in order to reduce leakage currents.4,5 However, Fe is known to have strong memory effects, which can redistribute Fe into subsequent films, as well as a narrow window of acceptable doping levels. 6 In addition, Fe creates deep electron traps (E C -0.9 eV), and deep hole traps (E V -0.9 eV), 7 which is beneficial for creating semi-insulating films, but can also result in charge traps with long time constants leading to current collapse in devices.8 PCSSs with fast response ...

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Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

Cited by 112 publications

References 18 publications

AlGaN‐based heterostructures grown on 4 inch Si(111) by MOVPE

AlGaN‐based heterostructures grown on 4 inch Si(111) by MOVPE

Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

High Voltage GaN Lateral Photoconductive Semiconductor Switches

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