Enhancement of acetylene gas sensing properties for a ZnO-based gas sensor produced by plasma immersion ion implantation and deposition

Oliveira, R. M.; Vieira, M. S.; Silva, Matheus M.N.F.

doi:10.1016/j.mssp.2018.12.031

Cited by 18 publications

(5 citation statements)

References 23 publications

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“…Various nanostructured materials including ZnO, 6,7 SnO 2 , 8 WO 3 , 9 LaFeO 3 , 10 and NiO 11 have been investigated for acetylene sensing. Among them, ZnO is the most widely used resistive-type acetylene sensing material, and various pure and doped ZnO acetylene sensing materials of distinct morphologies have been prepared via solvothermal, 5 hydrothermal, 12,13 thermal evaporation, 14 and electrospinning.…”

Section: Introductionmentioning

confidence: 99%

“…Various nanostructured materials including ZnO, , SnO 2 , WO 3 , LaFeO 3 , and NiO have been investigated for acetylene sensing. Among them, ZnO is the most widely used resistive-type acetylene sensing material, and various pure and doped ZnO acetylene sensing materials of distinct morphologies have been prepared via solvothermal, hydrothermal, , thermal evaporation, and electrospinning. , Uddin and colleagues tuned the acetylene-sensing temperature of ZnO to as low as 150 °C by integrating ZnO with Ag and reduced graphene oxide to form Ag-loaded ZnO/reduced graphene hybrid, attaining enhanced acetylene sensing due to synergistic effects .…”

Section: Introductionmentioning

confidence: 99%

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Ga-Doped ZnO Microbelts Based Resistive-type Sensor for Detection of Acetylene Gas

Bulemo

2023

ACS Appl. Electron. Mater.

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Structural materials with shorter gas diffusion pathways, lower electrical resistance, and crystal size play a vital role in resistive-type gas sensors. In the present work, ZnO was doped with Ga to lower its electrical resistance and inhibit crystal growth for acetylene sensing. Ga-doped ZnO microbelts were synthesized by electrospinning a solution containing metal precursors and quillaja saponin as a template for the evolution of the belt structure, followed by calcination to achieve microbelts with a BET surface area of 68.5 m2 g–1, an average pore size of 4.6 nm, and ZnO crystals as small as 16.5 nm. The Ga-doped ZnO microbelts exhibited a response (R a/R g) of up to 21.0, and a fast response (7.6 s) to 20 ppm acetylene at 400 °C in dry conditions. The materials also showed outstanding repeatability of response of 10.04 ± 0.04 against 10 cycles of 5-ppm acetylene, a response of 2.0 to acetylene as low as 0.2 ppm, and excellent selectivity against 5 ppm of hydrogen, pentane, toluene, carbon monoxide, and methane. The results suggested that Ga doping could effectively improve the electrical conductivity and acetylene sensing performance of ZnO-based sensors.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ga-Doped ZnO Microbelts Based Resistive-type Sensor for Detection of Acetylene Gas

Bulemo

2023

ACS Appl. Electron. Mater.

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“…Several materials with large specific surface areas, such as polymer membranes [1], carbon nanotubes [2], and metal oxides [3][4][5] have been studied as prospective candidates for future gas sensors. Actually, the most used gas sensors are based on metal oxides whose principle is based generally on chemisorption interactions which are oxydo-reduction reactions based on the exchange of electrons between the gas and the sensitive layer.…”

Section: Introductionmentioning

confidence: 99%

Room temperature NO2 gas sensor based on stain-etched porous silicon: Towards a low-cost gas sensor integrated on silicon

Mhamdi

Azaiez²,

Fiorido³

et al. 2022

Inorganic Chemistry Communications

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“…In particular, sensors based on metal-oxide semiconductors (MOX) have been extensively studied offering low cost, high stability, and compatibility with microelectronic technology. The most studied MOX are titanium dioxide (TiO2) [1], zinc oxide (ZnO) [2], Tin oxide (SnO2) [3], molybdenum oxide (MoO3) [4], and tungsten oxide (WO3) [5]. These materials, with interesting physical and chemical properties, exhibit a resistive response to different gases.…”

Section: Introductionmentioning

confidence: 99%

Study of n-WO3/p-porous silicon structures for gas-sensing applications

Mhamdi

Zaghouani²,

Fiorido

et al. 2020

J Mater Sci: Mater Electron

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In this work, we report on the gas sensing properties of n-WO3/p-porous silicon (PS) structures. Nanostructured WO3 films are deposited by simple chemical method via dip-coating of PS in tungsten hexachloride solution.The morphological and structural properties of the elaborated structures were investigated using Atomic Force Microscope (AFM), Raman and Fourier Transform Infrared (FTIR) Spectrometers. The NO2-sensing performances of the sensor were measured at different operating temperatures ranging from room temperature to 250 °C, different NO2 concentrations and different time exposure. The sensor showed a p-type semiconducting behavior which probably owning to the strong effect of the hetero-junction between the n-WO3 nanoparticles and p-porous silicon substrate. The obtained results confirm the suitability of these structures to detect low NO2 concentrations up to 1 ppm at moderate temperatures. These sensors exhibit fast response and recovery times.

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Enhancement of acetylene gas sensing properties for a ZnO-based gas sensor produced by plasma immersion ion implantation and deposition

Cited by 18 publications

References 23 publications

Ga-Doped ZnO Microbelts Based Resistive-type Sensor for Detection of Acetylene Gas

Ga-Doped ZnO Microbelts Based Resistive-type Sensor for Detection of Acetylene Gas

Room temperature NO2 gas sensor based on stain-etched porous silicon: Towards a low-cost gas sensor integrated on silicon

Study of n-WO3/p-porous silicon structures for gas-sensing applications

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