Enhancement-mode metal-semiconductor field-effect transistors based on single n-CdS nanowires

Abstract

Enhancement-mode (E-mode) metal-semiconductor field-effect transistors (MESFETs) based on single nanowires (NWs) were reported. The single NW used is n-CdS NW. Source-drain channel of the nano-MESFET is pinched off by the top surrounding Schottky gate at zero bias. When Schottky gate voltage (VG) changes from 0to0.25V, the source-drain current increases exponentially with VG, and an on/off current ratio of 5×103 is obtained. The maximum transconductance is 14.6nA∕V, and the gate leakage current is lower than source-drain current by more than two orders of magnitude. Their results suggest a way of fabricating E-mode nano-field-effect transistors.

Characterization, Cathodoluminescence, and Field‐Emission Properties of Morphology‐Tunable CdS Micro/Nanostructures

“…[18][19][20] It is also a decent active optical waveguide material and electrically driven lasing material, which may find wide applications in telecommunications, data storage and near-field optical lithography. [21,22] Many studies have been devoted to manipulating the size, morphology, and crystal structure of CdS materials and various nanostructures, such as nanotubes, [23] nanowires, [24] nanorods [25,26] and nanobelts, [27,28] have been synthesized. CdS nanostructures have proven to be ideal systems for exploring a large number of quantum phenomena at the nanoscale and investigating property-size relationships.…”

Surface-modified silicon nano-channel for urea sensing

“…for their extraordinary electrical, mechanical and optical characteristics [11][12][13]. These characteristics have been used for ultrasensitive biosensor applications [8,14].…”

Plasmon lasers at deep subwavelength scale

“…The truly nano-scale plasmonic laser devices consist of Cadmium Sulphide (CdS) nanowires [24] on a silver film, where the gap layer is Magnesium Fluoride (MgF 2 , Fig. 1a).…”