Enhancement-Mode Ga<sub>2</sub>O<sub>3</sub> FET With High Mobility Using p-Type SnO Heterojunction

Wang, Xunxun; Yan, Shiqi; Mu, Wenxiang; Jia, Zhitai; Zhang, Jiawei; Xin, Qian; Tao, Xutang; Song, Aimin

doi:10.1109/led.2021.3132192

Cited by 13 publications

(9 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In 2022, Wang et al. demonstrated that by forming a heterojunction between the p-type SnO and n-type β-Ga 2 O 3 nanomembrane, the V TH of the bottom-gate MOSFETs (SnO/β-Ga 2 O 3 /SiO 2 /p+ Si) can be increased from −40 V without SnO to ∼5 V with 12 nm SnO …”

Section: β-Ga2o3 Nanomembrane Fetsmentioning

confidence: 99%

“…128 In 2022, Wang et al demonstrated that by forming a heterojunction between the ptype SnO and n-type β-Ga 2 O 3 nanomembrane, the V TH of the bottom-gate MOSFETs (SnO/β-Ga 2 O 3 /SiO 2 /p+ Si) can be increased from −40 V without SnO to ∼5 V with 12 nm SnO. 129 Bottom-Gate MOSFETs. To effectively control the channels of the β-Ga 2 O 3 nanomembrane MOSFETs, i.e., to decrease the subthreshold slope (SS, mV/dec) of the MOSFET, various gating schemes have been investigated.…”

mentioning

confidence: 99%

See 1 more Smart Citation

State-of-the-Art β-Ga₂O₃ Field-Effect Transistors for Power Electronics

et al. 2022

View full text Add to dashboard Cite

Due to the emergence of electric vehicles, power electronics have become the new focal point of research. Compared to commercialized semiconductors, such as Si, GaN, and SiC, power devices based on β-Ga2O3 are capable of handling high voltages in smaller dimensions and with higher efficiencies, because of the ultrawide bandgap (4.9 eV) and large breakdown electric field (8 MV cm–1). Furthermore, the β-Ga2O3 bulk crystals can be synthesized by the relatively low-cost melt growth methods, making the single-crystal substrates and epitaxial layers readily accessible for fabricating high-performance power devices. In this article, we first provide a comprehensive review on the material properties, crystal growth, and deposition methods of β-Ga2O3, and then focus on the state-of-the-art depletion mode, enhancement mode, and nanomembrane field-effect transistors (FETs) based on β-Ga2O3 for high-power switching and high-frequency amplification applications. In the meantime, device-level approaches to cope with the two main issues of β-Ga2O3, namely, the lack of p-type doping and the relatively low thermal conductivity, will be discussed and compared.

show abstract

Section: β-Ga2o3 Nanomembrane Fetsmentioning

confidence: 99%

mentioning

confidence: 99%

State-of-the-Art β-Ga₂O₃ Field-Effect Transistors for Power Electronics

et al. 2022

View full text Add to dashboard Cite

show abstract

“…Janghyuk Kim et al [6] demonstrated the realization of an E−mode quasi−two−dimensional Ga 2 O 3 FET with a novel graphene gate architecture via a van der Waals heterojunction. Xunxun Wang et al [32] fabricated SnO/Ga 2 O 3 p−n heterojunctions in the back channel, achieving enhancement−mode operation.…”

Section: Introductionmentioning

confidence: 99%

Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer

Qiu

Wang

et al. 2022

Crystals

Self Cite

View full text Add to dashboard Cite

β−Ga2O3 field−effect transistors (FETs) were fabricated with and without local thinning to change the threshold voltage. A 220 nm Ga2O3 layer was mechanically exfoliated from a Cr−doped gallium oxide single crystal. Approximately 45 nm Ga2O3 was etched by inductively coupled plasma to form the local thinning. The threshold voltage of the device with etched local thinning increased from −3 V to +7 V compared to the unetched device. The effect of the local thinning was analyzed by device simulation, confirming that the local thinning structure is an effective method to enable enhancement−mode Ga2O3 FETs.

show abstract

“…In this work, the Ta-doped β-Ga 2 O 3 single crystal has been grown using the OFZ method with high doping concentration. However, severe scattering at the metal–insulator–semiconductor (MIS) interface is also a puzzle in the development of high-performance metal–insulator-semiconductor field-effect transistors (MISFETs), which is manifested as a decrease in carrier mobility . As is well-known, high carrier mobility is the key for β-Ga 2 O 3 -based field-effect transistors (FETs) in high power fields.…”

mentioning

confidence: 99%

“…However, severe scattering at the metal−insulator−semiconductor (MIS) interface is also a puzzle in the development of high-performance metal−insulator-semiconductor field-effect transistors (MISFETs), which is manifested as a decrease in carrier mobility. 10 As is well-known, high carrier mobility is the key for β-Ga 2 O 3 -based field-effect transistors (FETs) in high power fields. Kim et al fabricated a top-gate β-Ga 2 O 3 FET using hexagonal boron nitride (h-BN) with a thickness of 60 nm as the gate dielectric, which exhibits a mobility of 1.8 cm 2 /(V s).…”

mentioning

confidence: 99%

Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-β-Ga₂O₃ MISFETs

Sun

Zeng

et al. 2022

J. Phys. Chem. Lett.

View full text Add to dashboard Cite

β-Ga2O3 is considered an attractive candidate for next-generation high-power electronics due to its large band gap of 4.9 eV and high breakdown electrical field of 8 MV/cm. However, the relatively low carrier concentration and low electron mobility in the β-Ga2O3-based device limit its application. Herein, the high-quality β-Ga2O3 single crystal with high doping concentration of ∼3.2 × 1019 cm–3 was realized using an optical float-zone method through Ta doping. In contrast to the SiO2/β-Ga2O3 gate stack structure, we used hexagonal boron nitride as the gate insulator, which is sufficient to suppress the metal–insulator–semiconductor (MIS) interface defects of the β-Ga2O3-based MIS field-effect transistors (FETs), exhibiting outstanding performances with a low specific on-resistance of ∼6.3 mΩ·cm2, a high current on/off ratio of ∼108, and a high mobility of ∼91.0 cm2/(V s). Our findings offer a unique perspective to fabricate high-performance β-Ga2O3 FETs for next-generation high-power nanoelectronic applications.

show abstract

Enhancement-Mode Ga₂O₃ FET With High Mobility Using p-Type SnO Heterojunction

Cited by 13 publications

References 25 publications

State-of-the-Art β-Ga₂O₃ Field-Effect Transistors for Power Electronics

State-of-the-Art β-Ga₂O₃ Field-Effect Transistors for Power Electronics

Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer

Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-β-Ga₂O₃ MISFETs

Contact Info

Product

Resources

About

Enhancement-Mode Ga2O3 FET With High Mobility Using p-Type SnO Heterojunction

Cited by 13 publications

References 25 publications

State-of-the-Art β-Ga2O3 Field-Effect Transistors for Power Electronics

State-of-the-Art β-Ga2O3 Field-Effect Transistors for Power Electronics

Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer

Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-β-Ga2O3 MISFETs

Contact Info

Product

Resources

About

Enhancement-Mode Ga₂O₃ FET With High Mobility Using p-Type SnO Heterojunction

State-of-the-Art β-Ga₂O₃ Field-Effect Transistors for Power Electronics

State-of-the-Art β-Ga₂O₃ Field-Effect Transistors for Power Electronics

Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-β-Ga₂O₃ MISFETs