State-of-the-Art β-Ga₂O₃ Field-Effect Transistors for Power Electronics

Abstract

Due to the emergence of electric vehicles, power electronics have become the new focal point of research. Compared to commercialized semiconductors, such as Si, GaN, and SiC, power devices based on β-Ga2O3 are capable of handling high voltages in smaller dimensions and with higher efficiencies, because of the ultrawide bandgap (4.9 eV) and large breakdown electric field (8 MV cm–1). Furthermore, the β-Ga2O3 bulk crystals can be synthesized by the relatively low-cost melt growth methods, making the single-crystal substrates and epitaxial layers readily accessible for fabricating high-performance power devices. In this article, we first provide a comprehensive review on the material properties, crystal growth, and deposition methods of β-Ga2O3, and then focus on the state-of-the-art depletion mode, enhancement mode, and nanomembrane field-effect transistors (FETs) based on β-Ga2O3 for high-power switching and high-frequency amplification applications. In the meantime, device-level approaches to cope with the two main issues of β-Ga2O3, namely, the lack of p-type doping and the relatively low thermal conductivity, will be discussed and compared.

Design of lateral β-Ga2O3 MOSFET with PFOM of 769.42 MW cm–2

“…β-Ga 2 O 3 (Gallium Oxide), as a new wide bandgap semiconductor material, has attracted extensive attention in recent years [1][2][3]. The bandgap of β-Ga 2 O 3 can reach 4.85 eV, which is larger than that of third-generation semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN).…”

Influence of Oxygen on Ga2O3 Deposition at Low Temperature by MOCVD

“…In recent years, as an emerging ultrawide-bandgap semiconductor, Ga 2 O 3 has received much attention from researchers, with the advantages of the substantial bandgap ranging from 4.4 to 4.9 eV , and elevated breakdown voltage, excellent optical properties, and high radiation resistance, which has been widely applied in photodiode, field-effect transistors, Schottky barrier diodes, and solar-blind photodetector . Ga 2 O 3 exhibits five distinct crystal structures, denoted as α-, β-, γ-, δ-, and ε-Ga 2 O 3.…”

Contamination reduction for 150 mm SiC substrates by integrating CMP and Post-CMP cleaning

“…Advantages of wide bandgap semiconductors for fabricating the power devices have been widely discussed [1]. Particularly, silicon carbide (SiC) with high breakdown electric field (2.5 MV cm −1 versus 0.3 MV cm −1 for Si) and high thermal conductivity (270 W m −1 K −1 versus 150 W m −1 K −1 for Si) have been considered as the most promising semiconductor to be used in the traction inverters of electric vehicles (EVs), especially when the EV battery voltage is increased from 400 V to 800 V, for the sake of fast charging and high power density [2][3][4].…”