Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length

Ture, Erdin; Brückner, Peter; Quay, R.; Ambacher, O.; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank

doi:10.1109/eumic.2016.7777489

Cited by 9 publications

(7 citation statements)

References 21 publications

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“…The compared output characteristics of the BB-trigate HEMTs and conventional-trigate HEMT are shown in figure 4. The maximum drain current for the C-trigate HEMT (1.44 A mm −1 ), BB 100 HEMT (1.28 A mm −1 ), BB 300 HEMT (1.41 A mm −1 ) and BB 500 HEMT (1.48 A mm −1 ) are almost comparable to experimental reported work [37]. Figure 5(a) compares the simulated transfer and transconductance characteristics (@V ds = 5 V) of the BB-trigate HEMTs and conventional-trigate HEMT with respect to varying gate voltage (V gs ) from −3 V to 2 V. The subthreshold characteristics of all the devices are plotted using semi-log scaled transfer characteristics as shown in figure 5(b).…”

Section: Characteristicssupporting

confidence: 86%

GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation

Verma¹,

Nandi²

2022

Semicond. Sci. Technol.

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In the present work, we have proposed a GaN based trigate HEMT with AlGaN back-barrier (BB) layer that effectively suppress the punch-through effects as compared to the conventional device without back-barrier layer. Furthermore, the device performance of the proposed structure has been studied by varying the distance (tch) between AlGaN (barrier)/GaN (channel) to AlGaN (BB)/GaN (channel) interface from 100nm to 500nm. It is observed that the optimization of barrier/channel – to – BB/channel distance(tch) is beneficial for minimizing the off-state leakage current and thereby, a high ON/OFF ratio (~108) and nearly ideal subthreshold slope (~64mV/decade to ~66mV/decade) is achieved. Subsequently, it is shown that the optimized distance of tch = 300nm results in superior breakdown voltage (~198V) and cut-off frequency (~81GHz), leading to excellent Johnson figure-of-merit (JFOM). The proposed device promises great potential for use in next generations high-power microwave applications.

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Section: Characteristicssupporting

confidence: 86%

GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation

Verma¹,

Nandi²

2022

Semicond. Sci. Technol.

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“…10 is consistent with reports in the literature, e.g. V BR = 50 V for L G = 0.25 μm 31) but V BR = 28 V for L G = 0.1 μm; 32) this behavior has been attributed to short-channel effects. 31,32) On the other hand, V BR decreases with n s0 for the same reason as V BR of a junction decreases with doping.…”

Section: Near-threshold Breakdown Voltage Enhancementsupporting

confidence: 92%

“…V BR = 50 V for L G = 0.25 μm 31) but V BR = 28 V for L G = 0.1 μm; 32) this behavior has been attributed to short-channel effects. 31,32) On the other hand, V BR decreases with n s0 for the same reason as V BR of a junction decreases with doping. Lower V BR at higher n s0 translates to reduced N AT , for reasons explained in the previous paragraph.…”

Section: Near-threshold Breakdown Voltage Enhancementmentioning

confidence: 92%

Mechanism and enhancement of the near-threshold low OFF-state breakdown voltage in gallium nitride high electron mobility transistors

Prasannanjaneyulu

Bhattacharya

Karmalkar

2019

Jpn. J. Appl. Phys.

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We studied AlGaN/GaN high electron mobility transistors grown on a SiC substrate. They had a hard breakdown voltage V BR ⩾ 70 V under a deep OFF-state with a much less and softer V BR ∼ 27 V for near-threshold OFF-state gate bias conditions. We established that the low, soft breakdown is due to space charge limited current (SCLC) from drain to source via the GaN buffer, which has deep traps. Previous works had established the presence of SCLC from bulk to gate and drain to gate. For the first time we establish drain to source SCLC. We achieved this by analyzing the I DS -V DS data extracted from the measured I S -V DS . We determined the following by numerical simulation: (a) the density and energy level of traps causing the observed SCLC; (b) the minimum trap density required to suppress the SCLC and raise the V BR up to the avalanche limit for the whole OFF-state regime for devices with a channel length down to 0.15 μm.

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“…FinFET configuration could be a solution and in recent years, its usage started to dominate the GaN power device technology. FinFET has several advantages over the abovementioned approaches like E-mode operation, small On resistance, less gate and drain leakage, more linear transconductance (g m ) and higher output power density [16][17][18][19][20]. In this design architecture, V th could be shifted toward a positive direction by shrinking the channel lateral width.…”

Section: Introductionmentioning

confidence: 99%

DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric

Yilmaz¹,

Odabasi²,

Salkim³

et al. 2022

Semicond. Sci. Technol.

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In this study, an enhancement-mode (E-mode) GaN high electron mobility transistor (HEMT) with lateral tri-gate structure field effect transistor (FinFET) is proposed. To passivate the fin width, while keeping the normally-off performance of the FinFET intact, an ultrathin aluminium-oxide/sapphire (Al2O3) gate dielectric is proposed (in a basic single-finger 0.125 mm device). Later, the DC and radio frequency (RF) performances of the proposed FinFET designs (with optimized fin width and Al2O3 thickness) are compared with that of conventional planar HEMT. DC and RF measurements are performed using power transistors in 10-fingers configuration, with a total gate periphery of 2.5 mm. The effect of Fin structure and Al2O3 thickness on the electrical performance of HEMTs, including threshold voltage (Vth) shift, transconductance (gm) linearity, small-signal gain, cut off frequency (ft), output power (Pout), and power-added efficiency (PAE) are investigated. Based on our findings, FinFET configuration imposes normally-off functionality with a Vth= 0.2 V, while the planar architecture has a Vth= -3.7 V. Originating from passivation property of the alumina layer, the FinFET design exhibits two orders of magnitude smaller drain and gate leakage currents compared to the planar case. Moreover, large signal RF measurements reveals an improved Pout density by over 50% compared to planar device, attributed to reduced thermal resistance in FinFETs stemming from additional lateral heat spreading of sidewall gates. Owing to its superior DC and RF performance, the proposed FinFET design with ultrathin gate dielectric could bear the potential of reliable operating for microwave power applications, by further scaling of the gate length.

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Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length

Cited by 9 publications

References 21 publications

GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation

GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation

Mechanism and enhancement of the near-threshold low OFF-state breakdown voltage in gallium nitride high electron mobility transistors

DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric

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