Enhancement in the photoluminescence of ZnS nanowires by TiO2 coating and thermal annealing

Phase transformation from cubic ZnS to hexagonal ZnO by thermal annealing

“…Figure 3 shows the photoluminescence spectra of grown thin films annealed at 700-1000 ı C. The inset of Figure 3 revealed the PL spectrum of as-deposited ZnS sample which consists of single green emission peak at 2.4 eV. This green emission peak is characteristic emission from ZnS thin films as reported by many researchers in References [3,11]. But the annealed samples consist of two peaks at 2.5 eV and 3.29 eV which are related to defect emission and band-to-band emission of ZnO respectively OE12; 13 .…”

Synthesis and Characterization of SiO2-Sheathed ZnSe Nanowires

“…These techniques include sol-gel processes, thermal heating, solution-based methods, chemical vapor deposition, atomic layer deposition, and sputtering. [5][6][7][8][9][10][11][12][13] On the other hand, silicon dioxide (SiO 2 ) is known as one of the most suitable insulating material for nanowire passivation owing to its excellent insulating property, low dielectric constant, and high mechanical strength as well as compatibility with other materials widely used in integrated circuits (IC) fabrication. SiO 2 is also optically transparent for light absorption or emission of semiconductor nanowires, resulting in minimal destruction of their intrinsic optical properties such as photoluminescence.…”

Influence of SiO2Capping and Annealing on the Luminescence Properties of Larva-Like GaS Nanostructures

“…These techniques include sol-gel processes, thermal heating, solution-based methods, CVD, atomic layer deposition (ALD), and sputtering. [18][19][20][21][22][23][24][25] Of these techniques, the sol-gel process and solution-based wet processes are prone to contamination. SiO 2 cannot be grown on the GaS nanostructures by thermal heating because no silicon source is contained in the GaS nanostructures.…”