Enhancement and stabilization of porous silicon photoluminescence by oxygen incorporation with a remote-plasma treatment

Yao, Xiao; Heben, Michael J.; McCullough, J. Mac; Tsuo, Y. S.; Pánkové, J. I.; Deb, S. K.

doi:10.1063/1.108772

Cited by 77 publications

(9 citation statements)

References 14 publications

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“…[37][38][39] The doublets at 2087 and 2106 cm -1 are from two stretching vibration modes of monohydride and dihydride. 35 A large number of IR (not Raman) active modes are observed in the FTIR transmission spectrum of Fig. 4.…”

Section: Mechanisms For the Anomalous T-behavior Of Raman Spectra Fromentioning

confidence: 93%

“…34 The rocking or bending vibration of O in the Si-O-Si group is located at 481 cm -1 . 35 A sharp peak at 515 cm -1 may be due to the TO phonon mode of the Si lattice activated by the charge of F atoms. 36 Double peaks at 616 and 660 cm -1 with strong absorption are assigned to the SiH and SiH 2 wagging or deformation mode, respectively.…”

Section: Mechanisms For the Anomalous T-behavior Of Raman Spectra Fromentioning

confidence: 98%

“…36 Double peaks at 616 and 660 cm -1 with strong absorption are assigned to the SiH and SiH 2 wagging or deformation mode, respectively. [35][36][37] The line at 906 cm -1 is due to the scissor bending mode of dihydride. [37][38][39] The doublets at 2087 and 2106 cm -1 are from two stretching vibration modes of monohydride and dihydride.…”

Section: Mechanisms For the Anomalous T-behavior Of Raman Spectra Fromentioning

confidence: 99%

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Multi-Technique Study of Porous Silicon Membranes by Raman Scattering, Ftir, Xps, Aes and Sims

Feng¹,

Wee²

1994

Porous Silicon

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Optical and surface analytical techniques of Raman scattering, Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary ion mass spectrometry have been used to study porous Si membranes with visible light emission. The Raman features from porous Si membranes are markedly distinct from that of crystalline, microcrystalline and amorphous Si. Their anomalous Raman-temperature behavior is explained by the quantum wire model and strain effects. Their FTIR spectra show a large number of infrared active modes due to the oxidized and organized surfaces of the pores. Surface analyses reveal the main components of surface layers to be Si02 plus Si clusters and some contamination elements. The depth distributions of these impurities over the entire 200 [xm thick membrane are determined. The combination of surface and optical analyses offers a better understanding of the properties of porous Si.

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Section: Mechanisms For the Anomalous T-behavior Of Raman Spectra Fromentioning

confidence: 93%

Section: Mechanisms For the Anomalous T-behavior Of Raman Spectra Fromentioning

confidence: 98%

Section: Mechanisms For the Anomalous T-behavior Of Raman Spectra Fromentioning

confidence: 99%

See 1 more Smart Citation

Multi-Technique Study of Porous Silicon Membranes by Raman Scattering, Ftir, Xps, Aes and Sims

Feng¹,

Wee²

1994

Porous Silicon

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“…The HEB appears only after oxidation, 9,10 whereas the LEB is enhanced by oxidation. 9,[11][12][13] Both emission bands are also characterized by different luminescent decay rates. The HEB exhibits an extremely fast decay of several nanoseconds whereas the LEB is associated with three orders of magnitude slower decay times of approximately 10 s. 6,7,[14][15][16] It is, therefore, necessary to understand in detail both steady-state and time-resolved PL ͑TRPL͒ properties over the nanosecond to microsecond time scale, which will then provide an essential insight into the luminescence mechanisms in oxidized PS.…”

Section: Introductionmentioning

confidence: 99%

Carrier dynamics in oxidized porous silicon

Komuro

Kato

Morikawa

et al. 1996

Journal of Applied Physics

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A systematic study of carrier dynamics in oxidized porous silicon ͑PS͒ has been carried out using both steady-state and time-resolved photoluminescence ͑TRPL͒ measurements probed by tunable excitation over the photon energy range 3.68-1.94 eV for a temperature range 20 K to room temperature. The TRPL results show two emission bands, a high energy band ͑HEB͒ and a low energy band ͑LEB͒ with distinctively different temperature dependence that is attributed to different and competing carrier recombination mechanisms. The origin of the HEB PL is identified as oxygen-induced defect states with a broad distribution of 2.5Ϯ0.3 eV. These oxygen-induced defect states act as radiative recombination centers into which selective excitation of carriers results in the pronounced enhancement of the PL with the decay time of 5-6 ns. The LEB with the decay time of microsecond order is located around 2.1-2.0 eV. The time decay behavior and thermal quenching of the LEB PL intensity at less than 100 K are very similar to that of amorphous materials characterized by carrier recombination via band-tail states. Taking into account the results of the tunable-excitation steady-state PL and TRPL, a plausible model is proposed to explain carrier recombination in oxidized PS based on an analogy with amorphous materials.

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“…We attribute the PL induced by high-temperature annealing from a-SiO x :H film 29 to the structure crystallization with the help of oxygen. Moreover, the decreases in PL with thermal annealings at lower temperature in vacuum 11,13 arose from the structural disordering along with broken Si-H bonds. Finally, we could understand most of the reported luminescent phenomena in various silicon-based nanometric materials with the help of the present study.…”

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confidence: 99%

Role of structural saturation and geometry in the luminescence of silicon-based nanostructured materials

1996

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The structural saturation and stability, the energy gap, and the density of states of a series of small, siliconbased clusters have been studied by means of the PM3 and some ab initio ͑HF/6-31G * and 6-311ϩϩG**, CIS/6-31G * and MP2/6-31G*͒ calculations. It is shown that in order to maintain a stable nanometric and tetrahedral silicon crystallite and remove the gap states, the saturation atom or species such as H, F, Cl, OH, O, or N is necessary, and that both the cluster size and the surface species affect the energetic distribution of the density of states. This research suggests that the visible luminescence in the silicon-based nanostructured material essentially arises from the nanometric and crystalline silicon domains but is affected and protected by the surface species, and we have thus linked most of the proposed mechanisms of luminescence for the porous silicon, e.g., the quantum confinement effect due to the cluster size and the effect of Si-based surface complexes.The visible luminescence in porous silicon 1 is widely believed to arise from nanometric and crystalline silicon domains which show a quantum confinement effect. 1-5 However, other studies support different mechanisms of luminescence: several experimental and theoretical papers claimed 6-8 that both the quantum confinement and the surface ͑hydrogen saturation͒ effects are responsible; Brandt et al. 9 suggested that it may be attributable to a Si-backbone polymer, such as Si 6 O 3 H 6 ͑some later studies 10,11 also supported a similar idea͒; Xu, Gal, and Gross 12 assigned luminescence to molecules attached to the Si surface; a few authors attributed it to hydrogen-related surface species such as SiH 2 and polysilanes; 13,14 the formation of amorphous silicon has also been considered as a possible luminescent mechanism. 15 Some recent papers 16 -18 are very helpful in understanding the origin of the visible luminescence.The visible luminescence has also been found in other nanoscale silicon-based materials, such as ultrafine silicon particles, 19 crystallized amorphous Si:H/SiN x :H multiquantum-well structures, 20 and the laser-annealed hydrogenated silicon powder produced in plasma-enhanced chemical-vapor deposition processes, 21 which has recently been shown to be crystallized, 22 although their photoluminescence ͑PL͒ dynamics and energetic distribution are very different. This strongly suggests that the visible luminescence is associated with nanosize silicon-based materials, whose structures can be quite different but must possess local ordering domains. [1][2][3][4][5][6][7][8][17][18][19][20][21][22] In this paper, we performed first-principles calculations in order to understand the luminescent mechanism through the study of the atomic and electronic structures of a series of clusters: All the ab initio ͑HF/6-31G * and 6-311ϩϩ G **, CIS and MP2/6-31G *) and semiempirical PM3 calculations were carried out with the GAUSSIAN 92 package 23 on the IBM-sp2 computer at the University of Barcelona. All the structures in this study were optimi...

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Enhancement and stabilization of porous silicon photoluminescence by oxygen incorporation with a remote-plasma treatment

Cited by 77 publications

References 14 publications

Multi-Technique Study of Porous Silicon Membranes by Raman Scattering, Ftir, Xps, Aes and Sims

Multi-Technique Study of Porous Silicon Membranes by Raman Scattering, Ftir, Xps, Aes and Sims

Carrier dynamics in oxidized porous silicon

Role of structural saturation and geometry in the luminescence of silicon-based nanostructured materials

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