Enhanced visible photoluminescence from nc-Si/SiOx films deposited by electron beam evaporation

Optical and Structural Properties of Silicon Nanocrystals Embedded in SiOx Matrix Obtained by HWCVD

“…The spectrum of the sample grown at 800 • C presents two bands around 180 cm −1 and 480 cm −1 . These bands are related to disorder-activated modes in amorphous silicon [23,24]. For samples grown at 900 and 1000 • C: a reduction in the amorphous bands takes place and a small peak appears at 521.84 cm −1 [25].…”

Direct observation of resistive switching memories behavior from nc-Si embedded in SiO2 at room temperature

“…The substrate temperature is 120 ± 3°C. The samples were treated by two-step annealing including rapid thermal annealing (RTA) at 1000°C for 50 s followed by furnace annealing (FA) at 1000°C for 1 hour both under nitrogen atmosphere in order to form small nc-Si dots with diameter about 3-5 nm embedded in SiO 2 matrix [10,11].…”

UV irradiation and H2 passivation processes to classify and distinguish the origin of luminescence from thin film of nc-Si deposited by PECVD technique

“…They explained that the low energy peaks are due to ncSi:H whereas peaks in the range 2.8-3.1 eV are attributed to oxygen contamination on the surface of the nc-Si:H films [53]. In addition, Yang et al [54] studied the effect of annealing temperature (T a ) on nc-Si/SiO x thin films deposited by electron beam evaporation. An enhanced PL signal with a peak at 1.63 eV was observed at T a of 1000°C.…”

“…While the PL peaks for nc-Si/SiO x thin films at T a < 1000°C are related to Si-O bonds at the a-Si/SiO x interfaces. On the other hand, the PL peaks for samples with T a > 1000°C are attributed to the Si@O bonds at the formation of IPSS and the surface of nc-Si [54]. Moreover, Si/SiO 2 films, were obtained by rapid thermal annealing (RTA) of a-Si:H/SiO 2 , emitting enhanced green to red light after RTA process ranging from 450 to 1100°C [55].…”