Enhanced ultraviolet photosensing properties in Bi2S3 nanoparticles decorated ZnO nanorods' heterostructure

Mahapatra, Ayon Das; Basak, Durga

doi:10.1016/j.jallcom.2019.05.160

Cited by 32 publications

(13 citation statements)

References 62 publications

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“…32 The size distribution histograms of Bi 2 S 3 and Sb 2 S 3 are presented in Figure 2b,e, which showed mean crystallite sizes of 3.91 and 22.3 nm, respectively. The average sizes of the prepared nanoparticles were close to the observed 2c clearly displays an orthorhombic Bi 2 S 3 crystal phase with the (1 2 0) plane, 33 whose lattice spacing distance of 0.35 nm was well identified. Figure 2f also shows the distinct lattice fringe, whose distance of 0.39 nm corresponded to the (2 0 1) plane of the Sb 2 S 3 structure.…”

Section: Resultssupporting

confidence: 53%

“…The average sizes of the prepared nanoparticles were close to the observed crystallite size calculated from the XRD patterns. The HRTEM microgram shown in Figure c clearly displays an orthorhombic Bi 2 S 3 crystal phase with the (1 2 0) plane, whose lattice spacing distance of 0.35 nm was well identified. Figure f also shows the distinct lattice fringe, whose distance of 0.39 nm corresponded to the (2 0 1) plane of the Sb 2 S 3 structure …”

Section: Resultsmentioning

confidence: 95%

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Microwave-Assisted Synthesis of Bi₂S₃ and Sb₂S₃ Nanoparticles and Their Photoelectrochemical Properties

2021

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Bi2S3 and Sb2S3 nanoparticles were prepared by microwave irradiation of single-source precursor complexes in the presence of ethylene glycol as a coordinating solvent. The as-synthesized nanoparticles were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) coupled with energy-dispersive X-ray (EDX), photoluminescence (PL), and UV–vis near-infrared (NIR) spectroscopy. Their electrochemical potential was examined in [Fe(CN)]4–/[Fe(CN)]3– by cyclic and square wave voltammetry (CV and SWV) and electrochemical impedance spectroscopy (EIS). GCEBi2S3 and GCESb2S3 exhibit promising electrochemical performance and a higher specific capacitance of about 700–800 F/g in [Fe(CN)]4–/[Fe(CN)]3. Thin films of Bi2S3 and Sb2S3 were successfully incorporated in the fabrication of solar cell devices. The fabricated device using Bi2S3 (under 100 mW/cm2) showed a power conversion efficiency (PCE) of 0.39%, with a V oc of 0.96 V, a J sc of 0.00228 mA/cm2, and an FF of 44%. In addition, the device exhibits nonlinear current density–voltage characteristics, indicating that Bi2S3 was experiencing a Schottky contact. The Sb2S3-based solar cell device showed no connection in the dark and under illumination. Therefore, no efficiency was recorded for the device using Sb2S3, which indicated the ohmic nature of the film. This might be due to the current leakage caused by poor coverage. The nanoparticles were found to induce similar responses to the conventional semiconductor nanomaterials in relation to photoelectrochemistry. The present study indicates that Bi2S3 and Sb2S3 nanoparticles are promising semiconductor materials for developing optoelectronic and electrochemical devices as the films experience Schottky and Ohmic contacts.

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Section: Resultssupporting

confidence: 53%

Section: Resultsmentioning

confidence: 95%

Microwave-Assisted Synthesis of Bi₂S₃ and Sb₂S₃ Nanoparticles and Their Photoelectrochemical Properties

2021

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“…The enhancement in J ph value with deposition time is attributed to more light absorption and thus the availability of a higher number of charge photocarriers in SnS 2 films with higher deposition time , where P is the illumination power density . The wavelength dependent R λ values are plotted in Figure c, revealing that the enhancement of R λ value from 550 nm to the UV range signifies its broad-band photoresponsivity.…”

Section: Resultsmentioning

confidence: 96%

“…, where P is the illumination power density. 60 The wavelength dependent R λ values are plotted in Figure 3c, revealing that the enhancement of R λ value from 550 nm to the UV range signifies its broad-band photoresponsivity.…”

Section: Resultsmentioning

confidence: 97%

Biodegradable Filter Paper Based Broad-Band Photodetection by Chemical Bath Deposited SnS₂ 2D-Nanosheet Array Film

Mahapatra

Basak

2021

ACS Appl. Electron. Mater.

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We breathe in a world where growing electronic wastages are a serious threat to our ecosystem, and therefore biodegradable devices are more in demand. We have unprecedentedly demonstrated broad-band low-intensity photodetection by SnS 2 two-dimensional (2D) nanosheet (NS) array film grown on Whatman filter paper based biodegradable substrate. Phase pure SnS 2 2D NS array film has been obtained using a low-cost facile chemical bath deposition technique as confirmed by X-ray diffractometry, X-ray photoelectron spectroscopy, and field emission scanning electron microscopy. Unprecedentedly, these biodegradable substrates based SnS 2 NS array films can detect lights of wavelengths of 400 and 500 nm with photoresponsivity values of 6.31 and 10.22 mA/W, respectively. Uniquely, the SnS 2 NS array film also detects very low-intensity lights of 43 μW/cm 2 (400 nm) and 42 μW/cm 2 (500 nm) with photoresponsivity values of 15.87 and 20.24 mA/W with detectivity values of 3.04 × 10 10 and 3.88 × 10 10 jones, respectively. Very stable broad-band photoresponse under successive illumination conditions has also been demonstrated. Collated experimental data support a photoresponse mechanism involving defect levels. This filter paper based photoactive SnS 2 2D-NS array film can be applied to fabricate biodegradable low-intensity broad-band photodetector devices.

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“…They have found the responsivity of pristine ZnO to be ∼0.33 A/W, but it increased to 1.23 A/W at 1 V after the Bi 2 S 3 addition due to the optimum UV absorption and charge separation occurring at the interface. 23 It has been reported by Wan et al that the PD based on the p-type Sb 2 Se 3 microbelt over n-GaN exhibits self-powered detection properties with a responsivity over 12 mA/W in the near-infrared region. 25 Out of several topological insulators, Bi 2 Se 3 has a prominent topological insulator (TI) property and has insulation in the bulk with a gapless surface.…”

Section: Introductionmentioning

confidence: 99%

Topological Bi₂Se₃/n-GaN Hybrid Structure for Enhanced and Self-Powered UV Photodetectors

Kumar

Aggarwal

Yadav

et al. 2023

ACS Appl. Electron. Mater.

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Recent progress in topological insulating materials predicts a promising future for their applications in developing innovative quantum, electronic, and optoelectronic devices. The integration of topological insulators with technologically important semiconductors can open up different ways to build high-efficiency devices. Here, we have fabricated topological insulator Bi2Se3/GaN hybrid structure-based photodetectors (PDs) and studied their photoresponse characteristics in the ultraviolet (UV) region. Raman and high-resolution X-ray diffraction spectroscopy measurements revealed the formation of the c-axis-oriented rhombohedral crystal structure of the Bi2Se3 film. X-ray photoelectron spectroscopy studies disclosed the formation of a stoichiometric Bi2Se3 thin film on n-GaN. The Bi2Se3 thin film with the magnetotransport property exhibits a metallic nature with an upturn in resistivity below 20 K which possesses a weak antilocalization effect under an applied magnetic field, confirming the topological insulating behavior. Further, we have fabricated metal–semiconductor–metal-type PD devices on the hybrid structure of Bi2Se3/n-GaN, Bi2Se3/n-GaN junction, and pristine n-GaN. The photoresponse measurements have been performed using a UV (355 nm) light source by varying the laser power (1–15 mW) and the external bias (0–5 V). The calculated value of photoresponsivity of the PD devices on the Bi2Se3/n-GaN hybrid structure is found to be seven-fold higher than that of pristine-GaN. Further, it is observed that devices consisting of a Bi2Se3 film and GaN show self-powered UV PD characteristic nature. This study adds a significant step to enhance the performance of UV PDs based on large-area GaN templates by several folds with the help of topological Bi2Se3/GaN hybrid structures.

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Enhanced ultraviolet photosensing properties in Bi2S3 nanoparticles decorated ZnO nanorods' heterostructure

Cited by 32 publications

References 62 publications

Microwave-Assisted Synthesis of Bi₂S₃ and Sb₂S₃ Nanoparticles and Their Photoelectrochemical Properties

Microwave-Assisted Synthesis of Bi₂S₃ and Sb₂S₃ Nanoparticles and Their Photoelectrochemical Properties

Biodegradable Filter Paper Based Broad-Band Photodetection by Chemical Bath Deposited SnS₂ 2D-Nanosheet Array Film

Topological Bi₂Se₃/n-GaN Hybrid Structure for Enhanced and Self-Powered UV Photodetectors

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Enhanced ultraviolet photosensing properties in Bi2S3 nanoparticles decorated ZnO nanorods' heterostructure

Cited by 32 publications

References 62 publications

Microwave-Assisted Synthesis of Bi2S3 and Sb2S3 Nanoparticles and Their Photoelectrochemical Properties

Microwave-Assisted Synthesis of Bi2S3 and Sb2S3 Nanoparticles and Their Photoelectrochemical Properties

Biodegradable Filter Paper Based Broad-Band Photodetection by Chemical Bath Deposited SnS2 2D-Nanosheet Array Film

Topological Bi2Se3/n-GaN Hybrid Structure for Enhanced and Self-Powered UV Photodetectors

Contact Info

Product

Resources

About

Microwave-Assisted Synthesis of Bi₂S₃ and Sb₂S₃ Nanoparticles and Their Photoelectrochemical Properties

Microwave-Assisted Synthesis of Bi₂S₃ and Sb₂S₃ Nanoparticles and Their Photoelectrochemical Properties

Biodegradable Filter Paper Based Broad-Band Photodetection by Chemical Bath Deposited SnS₂ 2D-Nanosheet Array Film

Topological Bi₂Se₃/n-GaN Hybrid Structure for Enhanced and Self-Powered UV Photodetectors