Enhanced THz emission efficiency of composition-tunable InGaAs nanowire arrays

Beleckaitė, Ieva; Treu, Julian; Morkötter, Stefanie; Döblinger, Markus; Xu, Xiaomo; Adomavičius, R.; Finley, Jonathan J.; Koblmüller, Gregor; Krotkus, A.

doi:10.1063/1.4983641

Cited by 9 publications

(8 citation statements)

References 24 publications

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“…Surface accumulation and related electron scattering can be reduced by alloying InAs with gallium. The THz radiation from five Ga x In 1−x As NWs of different compositions is studied in [ 77 ]. It is found that the amplitude of THz pulses increases with increasing Ga fraction and reaches a maximum at x ≈ 0.47 ( Figure 20 a).…”

Section: Semiconductor Nanostructuresmentioning

confidence: 99%

“…THz excitation and photoluminescence spectra of Ga 0.47 In 0.53 As NWs ( b ). Reproduced from [ 77 ], with the permission of AIP Publishing.…”

Section: Figurementioning

confidence: 99%

“…When considering the fill factor of NW arrays, the THz generation from Ga-rich GaInAs NWs translates to ~4 times stronger emission than that from bulk p-type InAs. Reproduced from [77], with the permission of AIP Publishing.…”

Section: Inas Nanowiresmentioning

confidence: 99%

“…THz pulse amplitudes emitted from GaInAs NWs when normalized to bulk p-InAs amplitude (a). THz excitation and photoluminescence spectra of Ga 0.47 In 0.53 As NWs (b).Reproduced from[77], with the permission of AIP Publishing.…”

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confidence: 99%

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Semiconductor Characterization by Terahertz Excitation Spectroscopy

2023

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Surfaces of semiconducting materials excited by femtosecond laser pulses emit electromagnetic waves in the terahertz (THz) frequency range, which by definition is the 0.1–10 THz region. The nature of terahertz radiation pulses is, in the majority of cases, explained by the appearance of ultrafast photocurrents. THz pulse duration is comparable with the photocarrier momentum relaxation time, thus such hot-carrier effects as the velocity overshoot, ballistic carrier motion, and optical carrier alignment must be taken into consideration when explaining experimental observations of terahertz emission. Novel commercially available tools such as optical parametric amplifiers that are capable of generating femtosecond optical pulses within a wide spectral range allow performing new unique experiments. By exciting semiconductor surfaces with various photon energies, it is possible to look into the ultrafast processes taking place at different electron energy levels of the investigated materials. The experimental technique known as the THz excitation spectroscopy (TES) can be used as a contactless method to study the band structure and investigate the ultrafast processes of various technologically important materials. A recent decade of investigations with the THz excitation spectroscopy method is reviewed in this article. TES experiments performed on the common bulk A3B5 compounds such as the wide-gap GaAs, and narrow-gap InAs and InSb, as well as Ge, Te, GaSe and other bulk semiconductors are reviewed. Finally, the results obtained by this non-contact technique on low-dimensional materials such as ultrathin mono-elemental Bi films, InAs, InGaAs, and GaAs nanowires are also presented.

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Section: Semiconductor Nanostructuresmentioning

confidence: 99%

“…THz excitation and photoluminescence spectra of Ga 0.47 In 0.53 As NWs ( b ). Reproduced from [ 77 ], with the permission of AIP Publishing.…”

Section: Figurementioning

confidence: 99%

Section: Inas Nanowiresmentioning

confidence: 99%

mentioning

confidence: 99%

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Semiconductor Characterization by Terahertz Excitation Spectroscopy

2023

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“…Also THz emission may occur as a result of the boundary conditions on the carrier transport within a narrow-band semiconductor as a result of the photo-Dember (PD) effect [19], [20]. Recently THz emission has been observed in InGaAs nanowire arrays [21] as well as in iron-doped InGaAs [22].…”

Section: Introductionmentioning

confidence: 99%

Strain-induced InGaAs/InAlAs superlattices for terahertz radiation

Ponomarev,

Yachmenev,

Pushkarev

et al. 2018

Preprint

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We study the influence of residual strain in InGaAs/InAlAs superlattice (SL) on the ultrafast photocarrier dynamics under femtosecond laser excitation. We propose and fabricate a novel-designed strained InGaAs/InAlAs SL which allows us to obtain an ultrashort photocarrier relaxation time of τ ∼ 1.5 ps without Be-doping of the InGaAs photoconductor. We assume two dominant mechanisms to be responsible for a sharp reduction of τ : photocarriers trapping by defect levels in InAlAs barriers and increased photocarriers scattering at InGaAs/InAlAs interface roughness due to residual strain in the SL. The THz time-domain spectroscopic measurements reveal an increase in both emitted THz waveform and spectrum amplitudes with an increase of residual strain in SL. The results might be of considerable interest for accommodating the needs of THz pulsed spectroscopy and imaging in fundamental and applied branches of THz science and technology.

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Thermal characteristic of dark resistivity of InGaAs photoconductive semiconductor switches

Tian

Zhang

et al. 2019

J Mater Sci: Mater Electron

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Enhanced THz emission efficiency of composition-tunable InGaAs nanowire arrays

Cited by 9 publications

References 24 publications

Semiconductor Characterization by Terahertz Excitation Spectroscopy

Semiconductor Characterization by Terahertz Excitation Spectroscopy

Strain-induced InGaAs/InAlAs superlattices for terahertz radiation

Thermal characteristic of dark resistivity of InGaAs photoconductive semiconductor switches

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