Enhanced Thermoelectric Power in Dual-Gated Bilayer Graphene

Wang, Chang-Ran; Lu, Wen-Sen; Hao, Lei; Lee, Wei‐Li; Lee, Ting-Kuo; Lin, Feng Li; Cheng, I-Chun; Chen, Jian-Zhang

doi:10.1103/physrevlett.107.186602

Cited by 82 publications

(52 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In particular, its high mobility, which due to the weak electron-phonon interaction persists up to room temperature, can be orders of magnitude higher than in other 2D thermoelectric materials, such as semiconducting transition metal dichalcogenides (13)(14)(15)(16). Theoretical and experimental studies show that the Seebeck coefficient in graphene could reach values comparable to that in bulk semiconductors by decreasing the carrier density (17)(18)(19)(20)(21)(22)(23). The combination of graphene's large mobility and competitive Seebeck coefficient result in large power factor and large active cooling.…”

Section: ·Kmentioning

confidence: 99%

High thermoelectricpower factor in graphene/hBN devices

Duan

Wang

Lai

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

137

133

View full text Add to dashboard Cite

Fast and controllable cooling at nanoscales requires a combination of highly efficient passive cooling and active cooling. Although passive cooling in graphene-based devices is quite effective due to graphene's extraordinary heat conduction, active cooling has not been considered feasible due to graphene's low thermoelectric power factor. Here, we show that the thermoelectric performance of graphene can be significantly improved by using hexagonal boron nitride (hBN) substrates instead of SiO 2 . We find the room temperature efficiency of active cooling in the device, as gauged by the power factor times temperature, reaches values as high as 10.35 W·m , in MoS 2 . We further show that the Seebeck coefficient provides a direct measure of substrate-induced random potential fluctuations and that their significant reduction for hBN substrates enables fast gate-controlled switching of the Seebeck coefficient polarity for applications in integrated active cooling devices.graphene | Seebeck coefficient | thermoelectric power factor | electron-hole puddles | screened Coulomb scattering

show abstract

Section: ·Kmentioning

confidence: 99%

High thermoelectricpower factor in graphene/hBN devices

Duan

Wang

Lai

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

137

133

View full text Add to dashboard Cite

show abstract

“…30 Moreover, previous experimental results showed that exfoliated single-layer and bilayer graphene showed a high Seebeck coefficient of 50-100 µV K -1 . [31][32][33] However, the exceedingly high thermal conductivity of graphene (2500-5300 W m -1 K -1 ) 34,35 makes it a poor contestant for TE property. An effective method is to combine a low thermal conductivity material with high electrical conductivity.…”

Section: Introductionmentioning

confidence: 99%

Liquid Exfoliated Graphene as Dopant for Improving the Thermoelectric Power Factor of Conductive PEDOT:PSS Nanofilm with Hydrazine Treatment

Xiong

Jiang

Shi

et al. 2015

ACS Appl. Mater. Interfaces

137

View full text Add to dashboard Cite

show abstract

“…32,33 Furthermore, this results in the enhancement of the thermoelectric power in bilayer graphene. 34,35 Due to the Mexican-hat dispersion relations, there are two kinds of the gap (Fig. 1(d)).…”

Section: Resultsmentioning

confidence: 99%

Intra- and inter-layer charge redistribution in biased bilayer graphene

et al. 2016

View full text Add to dashboard Cite

We investigate the spatial redistribution of the electron density in bilayer graphene in the presence of an interlayer bias within density functional theory. It is found that the interlayer charge redistribution is inhomogeneous between the upper and bottom layers and the transferred charge from the upper layer to the bottom layer linearly increases with the external voltage which further makes the gap at K point linearly increase. However, the band gap will saturate to 0.29 eV in the strong-field regime, but it displays a linear field dependence at the weak-field limit. Due to the AB-stacked way, two carbon atoms per unit cell in the same layer are different and there is also a charge transfer between them, making the widths of π valence bands reduced. In the bottom layer, the charge transfers from the direct atoms which directly face another carbon atom to the indirect atoms facing the center of the hexagon on the opposite layer, while the charge transfers from the indirect atoms to the direct atoms in the upper layer. Furthermore, there is a diploe between the upper and bottom layers which results in the reduction of the interlayer hopping interaction.

show abstract

Enhanced Thermoelectric Power in Dual-Gated Bilayer Graphene

Cited by 82 publications

References 38 publications

High thermoelectricpower factor in graphene/hBN devices

High thermoelectricpower factor in graphene/hBN devices

Liquid Exfoliated Graphene as Dopant for Improving the Thermoelectric Power Factor of Conductive PEDOT:PSS Nanofilm with Hydrazine Treatment

Intra- and inter-layer charge redistribution in biased bilayer graphene

Contact Info

Product

Resources

About