Enhanced thermoelectric performance of higher manganese silicides by shock-induced high-density dislocations

Abstract

The shock-compression is a novel method to generate high-density dislocations in the thermoelectric materials and to enhance their thermoelectric properties.

Achieving superior performance in thermoelectric Bi0.4Sb1.6Te3.72 by enhancing texture and inducing high-density line defects

“…As compared with the pure solidstate sintering, the larger diffusion rate of atoms in the liquid phase makes the mass and heat transfer faster, promoting grain recrystallization [55]. Under the dual action of high temperature and axial sintering pressure, coupled with the capillary force in the flowing liquid on the grain surface, the greater plastic deformation of grains markedly promotes the grain rearrangement and simultaneously induces highly dense defects [56,57]. A part of the liquid phase recrystallizes into a bismuth telluride crystal, whilst the majority is extruded out.…”

Promising and Eco‐Friendly Cu2X‐Based Thermoelectric Materials: Progress and Applications

“…Further studies have enhanced the peak zT values of GeTe‐based thermoelectric materials to a level higher than 2 . Under this temperature range (from ≈650 to ≈800 K), other p‐type thermoelectric materials, such as SnSe and higher manganese silicide have also drawn extensive research interests due to either low cost or high performance. Both Zhao et al and Liu et al have reported the peak zT value of SnSe can be higher than 2 when the temperature is above 800 K. Meanwhile, most other results suggest the peak zT values of SnSe are at the temperature range lower than 800 K .…”

“…a) Peak zT values of state‐of‐the‐art p‐type thermoelectric materials as a function of temperature ( T ), including Bi 0.5 Sb 1.5 Te 3 , AgSeTe 2 , GeTe, SnSe, higher manganese silicide (HMS), Cu 2 X (X = Te, Se, and S), PbX (X = Te, Se, and S), SnTe, BiCuSeO, and half Heusler‐based ones. b) Peak zT values of state‐of‐the‐art Cu 2 X‐based thermoelectric materials and their derivatives as a function of publication year.…”

Development and understanding of solvothermal synthesized copper chalcogenide thermoelectric materials

“…[106][107][108][109][110][111][112][113] Further studies have enhanced the peak zT values of GeTe-based thermoelectric materials to a level higher than 2. [108,[110][111][112] Under this temperature range (from ~650 to ~800 K), other p-type thermoelectric materials, such as SnSe [34, 35, 40, 45, 47, 88-90, 92, 114] and Higher Manganese Silicide [115][116][117] have also drawn extensive research interests due to either low-cost or high-performance. Both…”

“…[2,120,122,124,125,127] Although, thermoelectric performance of Cu2S-based materials is not as outstanding as that of Cu2Se-based counterparts, due to the high earth-abundancy of S, [165] the costs of Cu2S-based materials are nearly half of the Cu2Se-based ones, which leads to a high competitiveness for commercialization. [43,99,119,121 of temperature (T), including Bi0.5Sb1.5Te3, [39,61,102,103] AgSeTe2, [104,105] GeTe, [106][107][108][109][110][111][112][113] SnSe, [34, 35, 40, 45, 47, 88-90, 92, 114] Higher Manganese Silicide (HMS), [115][116][117] Cu2X (X=Te, Se and S), [2,72,99,[118][119][120][121][122][123][124][125][126][127][128][129] PbX (X=Te, Se and S), [30,[63][64]…”