Enhanced Step Coverage of TiO<sub>2</sub> Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition

Schindler, Peter; Logar, Manca; Provine, J.; Prinz, Fritz B.

doi:10.1021/acs.langmuir.5b00216

Cited by 35 publications

(30 citation statements)

References 38 publications

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“…Ref. and references therein), we could not obtain uniform coating of nanotubes with aspect ratio larger than 80. Increasing the number of cycles had no real effect on reaching the deeper pores, owing to the ALD principles .…”

Section: Resultsmentioning

confidence: 83%

Antireflection ln₂O₃coatings of self-organized TiO₂nanotube layers prepared by atomic layer deposition

Macák

Přikryl

Sopha

et al. 2015

Phys. Status Solidi RRL

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We report on the uniform anti-reflection coating of TiO2 nanotube layers with a secondary material -indium trioxide (In2O3) -by Atomic Layer Deposition (ALD). We provide for the first time the detailed evidence of the ALD deposited coating inside nanotubes for three different tube layers with aspect ratio up to ≈80, which is so far the highest aspect ratio reported for ALDprocessed self-organized anodic TiO2 nanotubes. We show that uniform In2O3 coating of the nanotubes strongly influences the overall reflectance of the layers due to intrinsic properties of In2O3.

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Section: Resultsmentioning

confidence: 83%

Antireflection ln₂O₃coatings of self-organized TiO₂nanotube layers prepared by atomic layer deposition

Macák

Přikryl

Sopha

et al. 2015

Phys. Status Solidi RRL

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“…Recent work has shown the viability of PEALD for meeting the conformality requirements of the high aspect ratios required within these applications. 41 Overall, the nanolaminates of SiN-AlN from PEALD with an optimal Al content ≥ 13 at% provide an excellent pathway forward for sidewall spacer processes needed in advanced IC manufacturing nodes. …”

Section: Resultsmentioning

confidence: 99%

Plasma-Enhanced Atomic Layer Deposition of SiN–AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid

Kim¹,

Provine²,

Walch³

et al. 2016

ACS Appl. Mater. Interfaces

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The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C.

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“…This also shortens the length of the required purge step between exposures, leading to shorter ALD cycle times [21]. Flow systems also work reasonably well for coating high-aspect ratio structures with straight pores, and uniform films have been successfully demonstrated on the surface of trenches with aspect ratios of~100 etched into silicon [55]. However, the use of a carrier gas poses a serious problem when performing ALD on high-surface-area materials.…”

Section: Adsorption Of the Gaseous Precursor Onto The Surface Of The mentioning

confidence: 99%

Atomic Layer Deposition on Porous Materials: Problems with Conventional Approaches to Catalyst and Fuel Cell Electrode Preparation

et al. 2018

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Atomic layer deposition (ALD) offers exciting possibilities for controlling the structure and composition of surfaces on the atomic scale in heterogeneous catalysts and solid oxide fuel cell (SOFC) electrodes. However, while ALD procedures and equipment are well developed for applications involving flat surfaces, the conditions required for ALD in porous materials with a large surface area need to be very different. The materials (e.g., rare earths and other functional oxides) that are of interest for catalytic applications will also be different. For flat surfaces, rapid cycling, enabled by high carrier-gas flow rates, is necessary in order to rapidly grow thicker films. By contrast, ALD films in porous materials rarely need to be more than 1 nm thick. The elimination of diffusion gradients, efficient use of precursors, and ligand removal with less reactive precursors are the major factors that need to be controlled. In this review, criteria will be outlined for the successful use of ALD in porous materials. Examples of opportunities for using ALD to modify heterogeneous catalysts and SOFC electrodes will be given.

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Enhanced Step Coverage of TiO₂ Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition

Cited by 35 publications

References 38 publications

Antireflection ln₂O₃coatings of self-organized TiO₂nanotube layers prepared by atomic layer deposition

Antireflection ln₂O₃coatings of self-organized TiO₂nanotube layers prepared by atomic layer deposition

Plasma-Enhanced Atomic Layer Deposition of SiN–AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid

Atomic Layer Deposition on Porous Materials: Problems with Conventional Approaches to Catalyst and Fuel Cell Electrode Preparation

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Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition

Cited by 35 publications

References 38 publications

Antireflection ln2O3coatings of self-organized TiO2nanotube layers prepared by atomic layer deposition

Antireflection ln2O3coatings of self-organized TiO2nanotube layers prepared by atomic layer deposition

Plasma-Enhanced Atomic Layer Deposition of SiN–AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid

Atomic Layer Deposition on Porous Materials: Problems with Conventional Approaches to Catalyst and Fuel Cell Electrode Preparation

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Enhanced Step Coverage of TiO₂ Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition

Antireflection ln₂O₃coatings of self-organized TiO₂nanotube layers prepared by atomic layer deposition

Antireflection ln₂O₃coatings of self-organized TiO₂nanotube layers prepared by atomic layer deposition