Enhanced Stability of Amorphous Silicon Pin Solar Cells by Doping Profiles

Moeller, M.; Kausche, H.; Guenzel, E.; Juergens, W.; Stetter, W.

doi:10.1557/proc-49-325

MRS Proc.

1985

DOI: 10.1557/proc-49-325

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Enhanced Stability of Amorphous Silicon Pin Solar Cells by Doping Profiles

M. Moeller

H. Kausche

E. Guenzel

et al.

Abstract: Abstractpin cells with the light entering the n-layer (pinITO) or the p-layer (SnO2p(C)in) were prepared taking into account the ‘basic’ boron profile in the i-layer. Their efficiencies (up to 7.4% and 10.1%) show a light-induced degradation. This can be removed by doping the i-layer of pinITO cells with a decreasing boron profile. The initial efficiency is only slightly affected. Cells containing fluorine due to prior plasma-etching require higher amounts of boron for stability. For the cell type SnO2p(C)in, … Show more

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1994

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Compensation of the dangling-bond space charge in amorphous silicon solar cells by graded low-level doping in the intrinsic layer

Fischer

Shah

1994

Applied Physics Letters

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The compensation of the dangling-bond space charge in amorphous silicon p-i-n solar cells by graded, low-level doping in the intrinsic layer is discussed and demonstrated experimentally. Carrier collection in p-i-n cells without doping indicates that the degraded state space charge is largely positive, and thus that boron doping should be beneficial. Solar cells with linearly decreasing boron doping profiles are shown to yield a homogeneous collection in the intrinsic layer, and a red light conversion efficiency superior to that of undoped cells after light soaking. Also, the optimal doping concentration is shown to be a direct measure of the degraded state defect density.

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Compensation of the dangling-bond space charge in amorphous silicon solar cells by graded low-level doping in the intrinsic layer

Fischer

Shah

1994

Applied Physics Letters

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Effects of Low Level Graded I-Layer Doping on the Stability of A-SI:H Solar Cells

et al. 1992

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This work reports on attempts to tailor the electric field of a-Si:H solar cells by the graded lowlevel doping of the intrinsic layer to optimize conversion efficiency in the degraded state. Based on wavelength dependent collection measurements and numerical modeling, the degradation behavior of doped and undoped cells is explained in terms of the interaction of dopants and the light-induced space-charge. Low level doping is shown to shift the electric field away from the p/i interface towards the bulk of the i-layer. This results in a better carrier collection from the back part of the solar cell, and solar cells with improved stabilized red light conversion efficiency can be realized. These cells can be readily applied as bottom cells of stacked solar cells.

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Enhanced Stability of Amorphous Silicon Pin Solar Cells by Doping Profiles

Cited by 2 publications

References 2 publications

Compensation of the dangling-bond space charge in amorphous silicon solar cells by graded low-level doping in the intrinsic layer

Compensation of the dangling-bond space charge in amorphous silicon solar cells by graded low-level doping in the intrinsic layer

Effects of Low Level Graded I-Layer Doping on the Stability of A-SI:H Solar Cells

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