Enhanced Stability and Sensitivity of AlGaN/GaN-HEMTs pH Sensor by Reference Device

Effect of Surface Damage on pH Sensitivity of LaAlO3/SrTiO3 Heterostructure Device

“…19,20 The maximum operating temperature of siliconbased devices cannot exceed 150 °C due to its small band gap; arsenic toxicity can lead to secondary contamination when the solution is monitored by sensors for a long time. 19 It has been experimentally shown that the 2DEG in HEMTs possesses great prospects for producing highly sensitive and highly stable pH sensors, 4 one of Ⅲ nitrides show great application potential in many kinds of sensors, especially ion sensors, because of their excellent acid and alkali corrosion resistance, wide band gap and good biocompatibility, 21,22 although there are many advantages, however, its material epitaxy and device preparation cost are high, which limits its development, which inspiring us to investigate the LAO/STO heterostructure which can be grew much simpler compared with semiconductor HEMTs. Moreover, LAO/STO is highly stable and is non-toxic with good biological compatibility.…”