2007
DOI: 10.1103/physrevb.76.205307
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Enhanced spin-orbit scattering length in narrowAlxGa1xNGaNwires

Abstract: The magnetotransport in a set of identical parallel Al x Ga 1−x N / GaN quantum wire structures is investigated. The width of the wires ranges between 1110 and 340 nm. For all sets of wires, clear Shubnikov-de Haas oscillations are observed. We find that the electron concentration and mobility are approximately the same for all wires, confirming that the electron gas in the Al x Ga 1−x N / GaN heterostructure is not deteriorated by the fabrication procedure of the wire structures. For the wider quantum wires, … Show more

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Cited by 35 publications
(46 citation statements)
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References 41 publications
(49 reference statements)
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“…These predictions are supported by experiments performed on narrow wires fabricated from InGaAs ͑Ref. 6-8͒ and AlGaN/GaN 2DESs, 9 which have observed increasing spin coherence times S as a function of reduced wire width w. For systems in the motional narrowing regime-for which a spin precesses only over a small angle between momentum scattering events-the spin coherence length L S is expected to be inversely proportional to w.…”
Section: Introductionsupporting
confidence: 56%
See 1 more Smart Citation
“…These predictions are supported by experiments performed on narrow wires fabricated from InGaAs ͑Ref. 6-8͒ and AlGaN/GaN 2DESs, 9 which have observed increasing spin coherence times S as a function of reduced wire width w. For systems in the motional narrowing regime-for which a spin precesses only over a small angle between momentum scattering events-the spin coherence length L S is expected to be inversely proportional to w.…”
Section: Introductionsupporting
confidence: 56%
“…Thus quantitative information about both L S and L can be obtained from magnetotransport measurements. 5,[10][11][12][13][14][15][16][17][18][19][20][21][22][23] Extensive experimental and theoretical research on antilocalization phenomena in thin films of metals [11][12][13] and semiconductors, [23][24][25] in 2DESs, [14][15][16][17][18][19][20][26][27][28][29][30][31][32] in hole systems, 22,33 and in narrow wires [7][8][9][34][35][36] demonstrate that these measurements form a valuable experimental tool for investigating spin and phase coherence in various material systems.…”
Section: Introductionmentioning
confidence: 99%
“…Further, τ so increases as W decreases. In semiconductor 2DESs, where the SOI is dominated by inversion asymmetry via the structural Rashba and Dresselhaus terms, experiments and theory have verified 20,[24][25][26][27][28][29] that τ so ∝ W −1/2 . A similar dependence has not been proposed in the 3-dimensional bulk for SOI in heavy metallic elements like Bi.…”
Section: Resultsmentioning
confidence: 99%
“…For structural SOI, theory predicts that in quasi-one-dimensional (Q1D) wires, τ so increases with decreasing wire width 24,25 , indeed experimentally supported for various 2DESs 20,[26][27][28][29] . As yet, no similar theoretical predictions exist for SOI due to heavy elements, present in bulk Bi.…”
mentioning
confidence: 99%
“…We suggest that these anomalous BSR dips can be measured in systems with strong SO coupling [31,32], such as an InAs quantum well.…”
Section: Discussionmentioning
confidence: 99%