Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation

Abstract

We report the observation of enhanced oxidation on silicon and porous silicon samples exposed in air ambient to high-dose-rate 10 keV x-ray radiation at room temperature. The evolution of the radiation-induced oxide growth is monitored by ellipsometry and interferometric reflectance spectroscopy. Fourier transform infrared ͑FTIR͒ spectroscopy shows the emergence of Si-O-Si stretching modes and corresponding suppression of SiH x and Si-Si modes in the porous silicon samples. The radiation response depends strongly on initial native oxide thickness and Si-H surface species. The enhanced oxidation mechanism is attributed to photoinduced oxidation processes wherein energetic photons are used to dissociate molecular oxygen and promote the formation of more reactive oxygen species.

Surfing Silicon Nanofacets for Cold Cathode Electron Emission Sites

“…In addition, nowadays, Si-based field emitters are being used as neutralizers to reduce spacecraft charging, which occurs as a side-effect during propulsion . Thus, numerous reports are available on the preparation of Si nanowires, nanobelts, nanoribbons, as well as nanotubes and their utilization in miniaturized electronic devices, which show good FE properties. , However, upon getting exposed to ambient conditions, these nanostructures are prone to getting oxidized due to the formation of a native oxide layer (dielectric) at RT, which creates an additional tunneling barrier for electrons, resulting in a drastic reduction in the FE properties. At the same time, SiO 2 is an important candidate in micro- and nanoelectronic industries and protects the Si surface from contamination-related issues as well.…”

Growth of oxidation-resistive silicene-like thin flakes and Si nanostructures on graphene

“…[12,15] It is unusual that the Raman spectra of these very thin Si samples remain highly stable after 2-3 years the sample were grown. One would expect that the thin Si structures had been mostly oxidized and converted into SiO 2 , given the oxidation rate of 11-13 Å in one day [32] or about 2 nm in one month [33] . This is one important indication of the anti-oxidation effect of the graphene substrate.…”

Design and Fabrication of a Narrow Bandpass Filter with Low Dependence on Angle of Incidence

“…There is indeed an oxide layer with thickness of 3 nm above the top a-Si layer. Based on previous investigations [13,14], the surface of the a-Si layer Figure 2b. The transmittance decreases with increasing number of layers.…”

“…There is indeed an oxide layer with thickness of 3 nm above the top a-Si layer. Based on previous investigations [13,14], the surface of the a-Si layer in contact with air would be oxidized to form and an ultra-thin layer an oxide layer with a thickness of only 3 nm on the top. According to our calculation, the oxidation only shifts the center wavelength with only 2 nm and reduces the peak value in transmittance only 0.4%.…”