Enhanced resistive switching performance of aluminum oxide dielectric with a low temperature solution-processed method

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

“…The uniformity and narrowness of the resistance distribution are key metrics for stability and quality of RRAM devices. A narrow resistance distribution is considered to be a good demonstration of the stability and performance of devices [7,48,49,50]. In this work, the narrowest resistance distribution of Al/Ni/solution-based AlO x /Pt RRAM devices is found for the 250 °C annealing temperature, which therefore presents the best uniformity of the devices.…”

“…Figure 5b shows a schematic representation of this process consisting of ON and OFF states, which is considered as the switching mechanism of these devices. The formation and rupture process of CF is associated with the distribution of oxygen ions and oxygen vacancies in the TE and RS layer [22,48,57,58,59]. Figure 5b(i) shows the initial state of RRAM devices without applied voltage, indicating oxygen atoms present in the AlO x thin film.…”

“…This formation process of CF consisting of oxygen vacancies in the AlO x thin film is considered to be responsible for the resistance state transition (HRS to LRS) of RRAM devices at the ON state, as depicted in Figure 5b [48,58,60]. Conversely, in the RESET operation, with a negative voltage applied to TE, oxygen ions stored in the electrode drift back to the AlO x thin film under the influence of the negative electrical field and therefore reduce the density of oxygen vacancies in the AlO x thin film [48,63]. This action dominates the rupture process of CF [15,22,48] and the RRAM devices perform at the OFF state (LRS to HRS).…”

“…Conversely, in the RESET operation, with a negative voltage applied to TE, oxygen ions stored in the electrode drift back to the AlO x thin film under the influence of the negative electrical field and therefore reduce the density of oxygen vacancies in the AlO x thin film [48,63]. This action dominates the rupture process of CF [15,22,48] and the RRAM devices perform at the OFF state (LRS to HRS).…”

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

“…Another critical parameter on the synthesis process of resistive switching devices is the metal salt precursors, which are subdivided into three counter anions groups; [ 100 ] oxidants (hydrated nitrates), [ 72,79,80,98,101–121 ] reducers (alkoxides, [ 117,122–125 ] acetates, [ 72,76,78,79,104,105,109,111,113–118,126–153 ] and acetylacetonates [ 81,134,144,154–157 ] ), and neutrals (chlorine‐based). [ 63,71,103,107,110,112,116,119,125,132,158–164 ] Among these, oxidant counter ions are preferable due to the high oxidizing power (negative charge), greater solubility in water or polar organic solvents and low decomposition temperature, which are related to the electronic interactions between the metal and the nitrate group, as shown in Figure 9c.…”