Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process

Yang, Seyeong; Park, Jongmin; Cho, Youngboo; Lee, Yunseok; Kim, Sungjun

doi:10.3390/ijms232113249

Cited by 9 publications

(5 citation statements)

References 31 publications

(34 reference statements)

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“…Widely used and reliable RRAM devices to date are based on insulating TMOs such as Al 2 O 3 [14], TaO x [15], and TiO 2 [16]. The fabrication of TMOs-based RRAM devices relies on techniques such as chemical vapor deposition [17,18], and atomic layer deposition [19,20], which limits their application for flexible memristor devices. Hence, ultrathin twodimensional nanomaterials i.e.…”

Section: Introductionmentioning

confidence: 99%

Compositional effects of hybrid MoS₂–GO active layer on the performance of unipolar, low-power and multistate RRAM device

Raina

2024

Nanotechnology

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Currently, 2D nanomaterials-based RRAMs are explored on account of their tunable material properties enabling fabrication of low power and flexible RRAM devices. In this work, hybrid MoS2-GO based active layer RRAM devices are investigated. A facile hydrothermal co-synthesis approach is used to obtain the hybrid materials and a cost-effective spin coating method adopted for the fabrication of Ag/MoS2-GO/ITO RRAM devices. The performance of the fabricated hybrid active layer RRAM device is analysed with respect to change in material properties of the synthesized hybrid material. The progressive addition of 0.5, 1.5, 2.5 and 4.5 weight % of GO to MoS2, results in a hybrid active layer with higher intermolecular interaction, in the case of Ag/MoS2-GO4.5/ITO RRAM device, resulting in a unipolar resistive switching RRAM behavior with low SET voltage of 1.37 V and high Ion/Ioff of 200 with multilevel resistance states. A space charge limited conduction (SCLC) mechanism is obtained during switching, which may be attributed to the trap states present due to functional groups of GO. The increased number of conduction pathways on account of both Ag+ ions and oxygen vacancies (Vo 2+), participating in the formation of conducting filament, results in higher Ion/Ioff. This is the first report of unipolar Ag/MoS2-GO/ITO RRAM devices, which are particularly important in realizing high density crossbar memories for neuromorphic and in-memory computing as well as enabling flexible 2D nanomaterials-based memristor applications.

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Section: Introductionmentioning

confidence: 99%

Compositional effects of hybrid MoS₂–GO active layer on the performance of unipolar, low-power and multistate RRAM device

Raina

2024

Nanotechnology

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“…However, an unstable interface is formed between the electrode and the insulating layer, creating fluctuations in cycle-to-cycle uniformity because of the high reactivity of oxygen ions [28,29]. Recently, studies have focused on nitride-based insulating layers such as AlN [30], SiN [31,32], and WN [33] because of their excellent electrical properties and ionic chemistry, providing a choice to solve the mentioned problems of metal oxides [34,35]. The performance of SiN-based resistive switching devices compared with metal-oxide-based resistive switching devices is summarized in Table 1.…”

Section: Introductionmentioning

confidence: 99%

Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System

Ju,

Kim,

Kim

2023

Nanomaterials

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In this paper, we fabricate an ITO/SiN/TaN memristor device and analyze its electrical characteristics for a neuromorphic system. The device structure and chemical properties are investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. Uniform bipolar switching is achieved through DC sweep under a compliance current of 5 mA. Also, the analog reset phenomenon is observed by modulating the reset voltage for long-term memory. Additionally, short-term memory characteristics are obtained by controlling the strength of the pulse response. Finally, bio-inspired synaptic characteristics are emulated using Hebbian learning rules such as spike-rate-dependent plasticity (SRDP) and spike-timing-dependent plasticity (STDP). As a result, we believe that the coexistence of short-term and long-term memories in the ITO/SiN/TaN device can provide flexibility in device design in future neuromorphic applications.

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“…Among the above metal oxides, TaO x is known as the leading oxide material that shows outstanding memory characteristics such as high endurance (>10 10 ), fast switching speed (<1 ns), and good scalability (<30 nm) [ 21 , 22 , 23 , 24 , 25 ]. Moreover, some researchers reported that the TaO x layer can create oxygen vacancies easily, indicating that it has benefits in forming strong conductive filaments, further supporting its non-volatile memory device application [ 26 , 27 , 28 ]. However, several issues such as uniformity in operating voltage and resistance state still exist.…”

Section: Introductionmentioning

confidence: 99%

Improved Uniformity of TaOx-Based Resistive Switching Memory Device by Inserting Thin SiO2 Layer for Neuromorphic System

Ju,

Kim,

Jang

et al. 2023

Materials

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RRAM devices operating based on the creation of conductive filaments via the migration of oxygen vacancies are widely studied as promising candidates for next-generation memory devices due to their superior memory characteristics. However, the issues of variation in the resistance state and operating voltage remain key issues that must be addressed. In this study, we propose a TaOx/SiO2 bilayer device, where the inserted SiO2 layer localizes the conductive path, improving uniformity during cycle-to-cycle endurance and retention. Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) confirm the device structure and chemical properties. In addition, various electric pulses are used to investigate the neuromorphic system properties of the device, revealing its good potential for future memory device applications.

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Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process

Cited by 9 publications

References 31 publications

Compositional effects of hybrid MoS₂–GO active layer on the performance of unipolar, low-power and multistate RRAM device

Compositional effects of hybrid MoS₂–GO active layer on the performance of unipolar, low-power and multistate RRAM device

Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System

Improved Uniformity of TaOx-Based Resistive Switching Memory Device by Inserting Thin SiO2 Layer for Neuromorphic System

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Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process

Cited by 9 publications

References 31 publications

Compositional effects of hybrid MoS2–GO active layer on the performance of unipolar, low-power and multistate RRAM device

Compositional effects of hybrid MoS2–GO active layer on the performance of unipolar, low-power and multistate RRAM device

Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System

Improved Uniformity of TaOx-Based Resistive Switching Memory Device by Inserting Thin SiO2 Layer for Neuromorphic System

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Compositional effects of hybrid MoS₂–GO active layer on the performance of unipolar, low-power and multistate RRAM device

Compositional effects of hybrid MoS₂–GO active layer on the performance of unipolar, low-power and multistate RRAM device