Improved Uniformity of TaOx-Based Resistive Switching Memory Device by Inserting Thin SiO2 Layer for Neuromorphic System
Dongyeol Ju,
Sunghun Kim,
Junwon Jang
et al.
Abstract:RRAM devices operating based on the creation of conductive filaments via the migration of oxygen vacancies are widely studied as promising candidates for next-generation memory devices due to their superior memory characteristics. However, the issues of variation in the resistance state and operating voltage remain key issues that must be addressed. In this study, we propose a TaOx/SiO2 bilayer device, where the inserted SiO2 layer localizes the conductive path, improving uniformity during cycle-to-cycle endur… Show more
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