Enhanced radiation tolerance in Mn-doped ferroelectric thin films

Abstract

This work investigates the role of Mn-doping of ferroelectric lead zirconate titanate (PZT) thin films exposed to a range of ionizing radiation doses. PZT thin films were fabricated with both undoped and 4% Mn-doped compositions, and the functional response was compared both before and after exposure to gamma radiation doses up to 10 Mrad. A phenomenological model was applied to quantify defect interactions and compare trends in the degradation of the functional response. Mn-doped PZT samples demonstrate reduced magnitude of functional response in non-irradiated samples but exhibit vastly superior radiation tolerance of dielectric and ferroelectric properties across the range of gamma doses studied here. Strong MnZr/Ti″−VO·· defect dipoles pin domain walls, resulting in a lower initial functional response and mitigating the deleterious effects of irradiation on extrinsic contributions to the said response. Piezoelectric response trends as a function of radiation dose are highly nonlinear. The results of this work can be leveraged to engineer next-generation radiation-tolerant ferroelectric materials for applications where high levels of functional response stability are required, especially at elevated ionizing radiation dose.

The effects of proton radiation on aluminum oxide/zirconium-doped hafnium oxide stacked ferroelectric tunneling junctions

“…The good performance of traditional perovskite-based ferroelectric memory (FeRAM) in extreme environments makes it promising for aerospace and nuclear applications. [8][9][10][11][12] Hence, the space applications of the emerging hafnium-based FeRAM are also of interest. It is necessary to systematically evaluate the radiation effects of its materials, devices, and circuits before its application.…”

Influence of neutron and gamma irradiation on the electrocaloric properties of Mn-doped 0.9Pb(Mg1/3Nb2/3)O3–0.1PbTiO3 ceramics

“…The original polarization state of the materials could be restored by annealing to a few 100 • C (depending on the dose), which was related to the relaxation of radiation-induced defects [15][16][17][18]. Brewer et al noted that manganese doping of PZT films that resulted in a decreased polarization response compared to the undoped films enhanced their gamma-radiation tolerance for doses up to 10 5 Gy [19]. A phenomenological model has been proposed to relate measurable degradation of physical properties of functional oxides, including ferroelectrics, depending on the total ionization dose, notwithstanding the type of ionization [20].…”

Ferroelectric memory: state-of-the-art manufacturing and research

“…Отличительной особенностью FRAM является зарядовый принцип записи, основанный на переключении поляризации в сегнетоэлектрическом конденсаторе, что обеспечивает энергонезависимость наряду с высокой энергоэффективностью, скоростями чтения/записи, большим числом циклов перезаписи (1012 -1015) и длительным временем хранения (~10 лет) [3][4][5]. Сегнетоэлектрические материалы отличаются также высокой стойкостью к воздействию специальных факторов, что определяет перспективы их применения в особых условиях эксплуатации [13][14][15].…”