The effects of proton radiation on aluminum oxide/zirconium-doped hafnium oxide stacked ferroelectric tunneling junctions

Abstract

The effects of proton radiation on TiN/Zr-doped-HfO2(HZO)/Al2O3/P+-Ge ferroelectric tunneling junctions are investigated in the present work. The electrical characteristics are measured before and after different proton fluences. The remanent polarization exhibits negligible change, which demonstrates the proton radiation immunity of the ferroelectric material HZO. However, the capacitance, leakage current, endurance, and read current characteristics show obviously changed with the increase of proton fluence. The main reason for this is that proton radiation causes positive fixed charges to form in the Al2O3 layer, interface charges to form in Al2O3/Ge and the effective carrier concentration to reduce in the Ge substrate.

Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation

“…Further, no evidence for changes of the electrical properties and crystalline phase were found in stacks containing ferroelectric hafnium oxide-based films after proton irradiation at huge fluences of 10 15 protons/cm 2 . , This is not a contradiction to our observation but a direct indication that the energy loss of protons is too low to initiate a phase transition in HfZrO 2 films. Still, material property changes, like an increase of the polarization, can be induced in HfO 2 -based ferroelectrics, which are based on nuclear interaction and ion implantation .…”

“…Several studies on the radiation-hardness of hafnium oxide- − and GeSbTe-based − material systems have been reported. These cover proton ,,− and heavy ion irradiations ,,− of memristive devices for, e.g., oxide-based RRAM and FeRAM , applications. For PCM, studies have also discussed beam-induced changes depending on the structure of devices and arrays, − often reporting secondary failures due to the degradation of the CMOS transistors used in the electric circuits.…”

Effect of interfacial SiO2 layer thickness on the memory performances in the HfAlOx-based ferroelectric tunnel junction for a neuromorphic system

“…This first increased the orthorhombic phase in the ferroelectric HAO layer, and then the domain wall-pinning effect led to the degradation of polarization with the ongoing increase of oxygen vacancies. 62 Accordingly, during this wake-up process, the P r value continues to increase, and after saturation, a fatigue phenomenon in which the P r value decreases is found. [63][64][65] Fig.…”

Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors

“…HfO 2 -based FeFETs have the advantages of excellent compatibility with CMOS (Complementary Metal Oxide Semiconductor) processes, high scalability, and mature manufacturability, which are lacking with traditional perovskite ferroelectric materials [ 4 , 5 , 6 ]. Significant progress has been made in promoting the development of the advanced technology, improving device performance, and exploring novel device applications for these HfO 2 -based FeFETs [ 7 , 8 , 9 , 10 ]. For example, they were integrated into technology nodes below 28 nm by fabricating FeFETs in non-planar configurations [ 11 ]; the performance of the FeFETs device was optimized by changing the device structure [ 12 , 13 ], and basic logic operation was realized [ 14 ].…”