Enhanced Power and Breakdown in III-N RF Switches With a Slow Gate

Sattu, A.; Deng, Jixian; Billingsley, Daniel; Yang, Jinwei; Shur, M. S.; Gaška, R.; Simin, Grigory

doi:10.1109/led.2011.2126557

Cited by 6 publications

(8 citation statements)

References 7 publications

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“…Our results exploring the PC channel and LCL designs [1][2][3][4][5][6] show that these design innovations enable a sharp increase in the breakdown voltage, a large enhancement of the cutoff frequency, a better device stability and smaller spreading of the device parameters for higher yield, improved manufacturability, and smaller self-heating due to a lower thermal impedance.…”

Section: Discussionmentioning

confidence: 93%

“…To allow efficient gate voltage modulation at the control frequency, fC, we need to have τ LCL = R LCL C LCL < 1/ (2×f C ) Figure 11 compares the switching characteristics of microwave switches with and without LCL [5]. LCL design was also shown to improve the reproducibility [4] and increase the value of HFET breakdown voltage [6]. Figure 12 illustrates the improved breakdown uniformity of the LCL switches.…”

Section: Low Conducting Layer (Lcl) Passivation For Microwave Devicesmentioning

confidence: 99%

“…

We report on several key innovations to enable high performance/high reliability of nitride based FETs that include (1) the use of Perforated Channel (PC) design; (2) surface application of Low Conducting Layers (LCLs); (3) the combination of these two approaches (for achieving the ultimate power performance at the highest switching frequencies with minimum losses); (4) novel device geometries (combining the best features of lateral and vertical devices for normally-off transistors); (5) improved control of self-heating and better heat dissipation. We also review our recent results exploring the PC channel and LCL designs [1][2][3][4][5][6]. Experimental and simulation results reported in [1-6] demonstrated a sharp increase in the breakdown voltage, a large enhancement of the cutoff frequency, a better device stability and smaller spreading of the device parameters for higher yield, improved manufacturability, and smaller self-heating due to a lower thermal impedance.

…”

mentioning

confidence: 99%

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New Approaches to Realizing High Power Nitride Based Field Effect Transistors

2014

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We report on several key innovations to enable high performance/high reliability of nitride based FETs that include (1) the use of Perforated Channel (PC) design; (2) surface application of Low Conducting Layers (LCLs); (3) the combination of these two approaches (for achieving the ultimate power performance at the highest switching frequencies with minimum losses); (4) novel device geometries (combining the best features of lateral and vertical devices for normally-off transistors); (5) improved control of self-heating and better heat dissipation. We also review our recent results exploring the PC channel and LCL designs . Our experimental and simulation results demonstrated a sharp increase in the breakdown voltage, a large enhancement of the cutoff frequency, a better device stability and smaller spreading of the device parameters for higher yield, improved manufacturability, and smaller self-heating due to a lower thermal impedance.

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Section: Discussionmentioning

confidence: 93%

Section: Low Conducting Layer (Lcl) Passivation For Microwave Devicesmentioning

confidence: 99%

“…

…”

mentioning

confidence: 99%

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New Approaches to Realizing High Power Nitride Based Field Effect Transistors

2014

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We report on several key innovations to enable high performance/high reliability of nitride based FETs that include (1) the use of Perforated Channel (PC) design; (2) surface application of Low Conducting Layers (LCLs); (3) the combination of these two approaches (for achieving the ultimate power performance at the highest switching frequencies with minimum losses); (4) novel device geometries (combining the best features of lateral and vertical devices for normally-off transistors); (5) improved control of self-heating and better heat dissipation. We also review our recent results exploring the PC channel and LCL designs . Our experimental and simulation results demonstrated a sharp increase in the breakdown voltage, a large enhancement of the cutoff frequency, a better device stability and smaller spreading of the device parameters for higher yield, improved manufacturability, and smaller self-heating due to a lower thermal impedance.

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“…The design rules for field plates are considered in 22 . Here we review two new approaches: using a Field Controlled Electrode 26 and using Frequency Configurable Electronics approach 23 . Figure 7 shows a design of a power AlGaN/GaN HEMT with a Field Controlled Electrode.…”

Section: Device Design and Performancementioning

confidence: 99%

“…Figure 7 shows a design of a power AlGaN/GaN HEMT with a Field Controlled Electrode. 23 The MEMOCVD® 24 device structures were grown on insulating 4H-SiC substrates. The dimensions were: a thin low temperature AlN was followed by a1.5 Pm undoped GaN layer and by 22 nm Si-doped Al 0.3 Ga 0.7 N layer.…”

Section: Device Design and Performancementioning

confidence: 99%

Physics of GaN-based Power Field Effect Transistors

Shur¹

2013

ECS Trans.

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Unique properties of GaN/AlN/InN heterostructures make them superior for high power applications. The key issues in the device designs are achieving normally-off operation, controlling the electric field distribution in the device channel to prevent breakdown, eliminating or reducing non-ideal effects causing reliability issues, and providing for efficient heat dissipation. High electric fields at the gate edges lead to an additional strain and hot electron effects causing the current collapse and gate lag. Quantum well designs (e.g. incorporating an InGaN or GaN quantum well between the wide band gap AlGaN barrier layer and GaN or AlGaN buffer) might control the wave function penetration and the real space transfer and increase the breakdown voltage. Insulated gate heterostructure HFETs (MOSHFETs) demonstrated superior performance and reliability. Field plates, recessed and double recessed gates, drain field controlled electrodes have been used to control current collapse and improve device reliability. An emerging approach is Frequency Configurable Electronics that enables better electric field uniformity.

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III-nitride microwave control devices and ICs

Simin¹,

Jahan²,

Yang³

et al. 2013

Semicond. Sci. Technol.

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The growing complexity and functionality of modern microwave systems put increasing demands on the performance and reliability of RF control devices. Low channel sheet resistance in the on-state and small leakage currents in the off-state, extremely high breakdown voltages, chemical inertness and planar structure make III-nitride heterostructure-based devices uniquely suitable for the next-generation switching devices. The AlInN-based devices and devices using low-conducting layers for controlling surface field and surface charges are expected to further boost the performance. This paper presents a review of III-nitride control devices based on heterostructure field-effect transistors (HFETs), insulated gate HFETs (MISHFETs) and novel capacitively coupled contact and frequency configurable electronics technologies.

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Enhanced Power and Breakdown in III-N RF Switches With a Slow Gate

Cited by 6 publications

References 7 publications

New Approaches to Realizing High Power Nitride Based Field Effect Transistors

New Approaches to Realizing High Power Nitride Based Field Effect Transistors

Physics of GaN-based Power Field Effect Transistors

III-nitride microwave control devices and ICs

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