Enhanced photovoltaic properties in graphene/polycrystalline BiFeO3/Pt heterojunction structure

Zang, Yongyuan; Xie, Dan; Wu, Xinzhou; Chen, Yu; Lin, Yuxuan; Li, Mohan; Tian, He; Li, Xiao; Li, Zhen; Zhu, Hongwei; Ren, Tian‐Ling; Plant, David V.

doi:10.1063/1.3644134

Cited by 99 publications

(70 citation statements)

References 22 publications

(28 reference statements)

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“…For example, in the BFO based device, Zang et al replaced the ITO electrode with nitric acid (HNO 3 ) treated graphene and observed a much increased photocurrent of 2.8 mA cm À2 , which was attributed to the extended depletion region throughout the entire ferroelectric layer by the formation of metal-intrinsic semiconductor-metal (MIM) structure. 78 It should be noticed that recently Alexe et al observed a tip-enhanced photovoltaic effect in the BFO lm, where the photogenerated carriers in the bulk of the BFO lm were collected very efficiently by the AFM tips (Fig. 4).…”

Section: Exciton Dissociation Efficiencymentioning

confidence: 99%

Arising applications of ferroelectric materials in photovoltaic devices

et al. 2014

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The ferroelectric-photovoltaic (FE-PV) device, in which a homogeneous ferroelectric material is used as a light absorbing layer, has been investigated during the past several decades with numerous ferroelectric oxides. The FE-PV effect is distinctly different from the typical photovoltaic (PV) effect in semiconductor p-n junctions in that the polarization electric field is the driving force for the photocurrent in FE-PV devices. In addition, the anomalous photovoltaic effect, in which the voltage output along the polarization direction can be significantly larger than the bandgap of the ferroelectric materials, has been frequently observed in FE-PV devices. However, a big challenge faced by the FE-PV devices is the very low photocurrent output. The research interest in FE-PV devices has been re-spurred by the recent discovery of above-bandgap photovoltage in materials with ferroelectric domain walls, electric switchable diodes and photovoltaic effects, tip-enhanced photovoltaic effects at the nanoscale, and new low-bandgap ferroelectric materials and device design. In this feature article, we reviewed the advance in understanding the mechanisms of the ferroelectric photovoltaic effects and recent progress in improving the photovoltaic device performance, including the emerging approaches of integrating the ferroelectric materials into organic heterojunction photovoltaic devices for very high efficiency PV devices.

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Section: Exciton Dissociation Efficiencymentioning

confidence: 99%

Arising applications of ferroelectric materials in photovoltaic devices

et al. 2014

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“…2 However, incorporating graphene, 3 which is a promising material because of its high thermal conductivity, electrical conductivity and strong mechanical strength, into the ZnO nanostructure growth processes has not been reported yet. Since employing graphene can enhance electric conductivity, 4 photovoltaic properties, 5 and anti-bacterial capability, 6 various nanodevices have been demonstrated with the ZnO NRs decorating graphene, with development industry, incorporating graphene has become an inexpensive and effective way to boost material properties and device performance. However, there are diversified ways to include graphene into the nanocomposite fabrication process.…”

Section: Introductionmentioning

confidence: 99%

Modulating the size of ZnO nanorods on SiO2 substrates by incorporating reduced graphene oxide into the seed layer solution

Wei

Weng

et al. 2017

AIP Advances

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“…ITO/(Bi 1 À x Sr x )FeO 3 À δ ceramics/Au have larger J sc and slightly smaller V oc than those in ITO/BFO ceramic/Au. [15].…”

Section: Resultsmentioning

confidence: 95%

“…It was reported that Sr doping can stabilize the BFO perovskite structure [11]. BFO with various electrodes has shown photovoltaic (PV) effects and photoconductivity with potential applications [12][13][14][15][16][17][18][19][20][21]. Mechanisms, including asymmetric ferroelectric PV effect [16], domain-wall model [17], and p-n junction model [20], have been proposed to explain the PV responses.…”

Section: Introductionmentioning

confidence: 97%

A-site strontium doping effects on structure, magnetic, and photovoltaic properties of (Bi1−Sr )FeO3− multiferroic ceramics

Schmidt

et al. 2015

Ceramics International

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Raman spectroscopy, X-ray diffraction (XRD), magnetization hysteresis loop, synchrotron X-ray absorption spectroscopy, and photovoltaic effects have been measured in (Bi 1 À x Sr x )FeO 3 À δ (BFO100xSr) ceramics for x ¼0.0, 0.05, 0.10, and 0.15. Raman spectra and XRD reveal a rhombohedral R3c structure in all compounds. A-site Sr 2 þ doping increases fluctuations in cation-site occupancy and causes broadening in Raman modes. BFO15Sr exhibits a strong ferromagnetic feature due to reduction of Fe-O-Fe bond angle evidenced by the extended synchrotron X-ray absorption fine structure. The heterostructure of indium tin oxide (ITO) film/(Bi 1 À x Sr x )FeO 3 À δ ceramic/Au film exhibit clear photovoltaic (PV) responses under blue illumination of λ¼ 405 nm. The maximal power-conversion efficiency and external quantum efficiency in ITO/ BFO5Sr/Au are about 0.004% and 0.2%, respectively. A model based on optically excited charges in the depletion region between ITO and (Bi 1 À x Sr x )FeO 3 À δ can well describe open-circuit voltage and short-circuit current as a function of illumination intensity.

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Enhanced photovoltaic properties in graphene/polycrystalline BiFeO3/Pt heterojunction structure

Cited by 99 publications

References 22 publications

Arising applications of ferroelectric materials in photovoltaic devices

Arising applications of ferroelectric materials in photovoltaic devices

Modulating the size of ZnO nanorods on SiO2 substrates by incorporating reduced graphene oxide into the seed layer solution

A-site strontium doping effects on structure, magnetic, and photovoltaic properties of (Bi1−Sr )FeO3− multiferroic ceramics

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