2015
DOI: 10.1016/j.actamat.2015.01.021
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Enhanced photovoltaic effects and switchable conduction behavior in BiFe0.6Sc0.4O3 thin films

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Cited by 37 publications
(36 citation statements)
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“…PFM is the primary tool to investigate the nanoscale ferroelectric domains and polarization dynamics for various piezoelectric and ferroelectric materials such as PZT, relaxor‐based piezoelectric materials (PZN‐PT or PMN‐PT), multiferroic BiFeO 3 (BFO) and organic ferroelectrics. We have applied PFM in many material systems, including doped/undoped BFO thin films, PZN‐PT single crystal, CH 3 NH 3 PbI 3 perovskite, MOF nanocrystals, poly(vinylidene fluoride) (PVDF) film, and ferroelectric‐like copper‐doped zinc oxide (ZnO:Cu) thin films . Taking the PZN‐PT single crystal as an example, the out‐of‐plan domain structure and the corresponding surface potential are illustrated in Figure i.…”
Section: Examples Of Materials Systems Investigated Using Spm Techniquesmentioning
confidence: 99%
“…PFM is the primary tool to investigate the nanoscale ferroelectric domains and polarization dynamics for various piezoelectric and ferroelectric materials such as PZT, relaxor‐based piezoelectric materials (PZN‐PT or PMN‐PT), multiferroic BiFeO 3 (BFO) and organic ferroelectrics. We have applied PFM in many material systems, including doped/undoped BFO thin films, PZN‐PT single crystal, CH 3 NH 3 PbI 3 perovskite, MOF nanocrystals, poly(vinylidene fluoride) (PVDF) film, and ferroelectric‐like copper‐doped zinc oxide (ZnO:Cu) thin films . Taking the PZN‐PT single crystal as an example, the out‐of‐plan domain structure and the corresponding surface potential are illustrated in Figure i.…”
Section: Examples Of Materials Systems Investigated Using Spm Techniquesmentioning
confidence: 99%
“…As a result, the effect is probably less well studied in contrast to the BPVE. The overall barrier height can be enhanced by sandwiching a ferroelectric semiconductor between electrodes of different materials with a large difference in work function . This was first demonstrated by Blom et al in 1994 who sandwiched a ferroelectric PbTiO 3 film between a Schottky contact (Au) and an Ohmic bottom electrode (La 0.5 Sr 0.5 CoO 3 ) and showed that the Schottky barrier can be reduced by switching the polarization in the direction of the ferroelectric polarization.…”
Section: Application In Solar Cellsmentioning
confidence: 94%
“…However, the photovoltaic effect obtained using this mechanism is not stable as the poled state of vacancies usually becomes unstable on removal of the electric field over time. However, it remains useful in distinguishing between the depolarization and Schottky junction–based photovoltaic mechanism as it is possible to have switchable diode‐like rectifying behavior using the Schottky junction effect but not with the depolarization field . Interestingly, the Schottky junction effect is independent of the direction of polarization and, therefore, it can be used to distinguish it from BPVE .…”
Section: Application In Solar Cellsmentioning
confidence: 99%
“…Perhaps checking the dark conduction behavior simultaneously with the photovoltaic behavior is useful to identify which mechanism is working, because tunable Schottky barriers will give rise to switchable diode-like rectifying behavior in dark 131,164,183 while the bulk effect of Edp will not. Therefore, the mechanism how the switchable photovoltaic effect is controlled by the ferroelectric polarization is still controversial.…”
Section: Schottky Barrier Effectmentioning
confidence: 99%
“…Therefore, the mechanism how the switchable photovoltaic effect is controlled by the ferroelectric polarization is still controversial. 164 Thus, both Ebi and Edp can constructively contribute to the overall photovoltaic output. 32 A proper design of the energy band alignment in the electrode/ferroelectric/electrode sandwich structure can lead to an overall Ebi within Schottky barriers having the same direction with Edp.…”
Section: Schottky Barrier Effectmentioning
confidence: 99%