Enhanced photoresponse of TiO2/MoS2 heterostructure phototransistors by the coupling of interface charge transfer and photogating

Liu, Bingxu; Sun, Yinghui; Wu, Yonghuang; Li, Kai; Ye, Huanyu; Li, Fangtao; Zhang, Limeng; Jiang, Yong; Wang, Rongming

doi:10.1007/s12274-020-3137-6

Cited by 31 publications

(20 citation statements)

References 79 publications

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“…5a. Moreover, the power dependence of I ph at these selected wavelengths is well described by the relationship, 13 I ph ∼ P s θ , as indicated by the solid lines in Fig. 5b.…”

Section: Resultssupporting

confidence: 54%

“…12 When the holes (electrons) are photogenerated, they will be captured by defect states and trapped in the localized states, which can act as a local gate (Δ V GS ) and produce effectively an extra electric field inducing more electrons (holes) in the channel and thus modulating the conductivity. 13 Fig. 5a and b present the power dependence of R and I ph at different illumination wavelengths.…”

Section: Resultsmentioning

confidence: 99%

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High-sensitivity CdTe phototransistors with the response spectrum extended to 1.65 μm

et al. 2022

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“…5a. Moreover, the power dependence of I ph at these selected wavelengths is well described by the relationship, 13 I ph ∼ P s θ , as indicated by the solid lines in Fig. 5b.…”

Section: Resultssupporting

confidence: 54%

Section: Resultsmentioning

confidence: 99%

High-sensitivity CdTe phototransistors with the response spectrum extended to 1.65 μm

et al. 2022

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“…In the accumulation mode (V GS > V th ), as the electron concentration increases (V GS increases), Fermi level shifted close to the conduction band where hole-traps are nearly unoccupied. Upon illumination, the photogenerated holes were trapped by the localized states at the In 2 O 3 /PTPBT-ET interface, providing a photogating effect to modulate the channel current and resulting in negative V th shift (Figure S6, Supporting Information), which can be expressed as: [46,47]…”

Section: +mentioning

confidence: 99%

Flexible and Air‐Stable Near‐Infrared Sensors Based on Solution‐Processed Inorganic–Organic Hybrid Phototransistors

Tang

et al. 2021

Adv Funct Materials

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Flexible and air-stable phototransistors are highly demanded for wearable nearinfrared (NIR) image sensors. However, advanced NIR sensors via low-cost, solution-based processes remained a challenge. Herein, high-performance inorganic-organic hybrid phototransistors are achieved based on solution processed n-type metal oxide/polymer semiconductor heterostructures of In 2 O 3 /poly{5,5′-bis[3,5-bis(thienyl)phenyl]-2,2′-bithiophene-3ethylesterthiophene]} (PTPBT-ET). The In 2 O 3 /PTPBT-ET hybrid phototransistor combines the advantages of both fast electron transport in In 2 O 3 and high photoresponse in PTPBT-ET, showing high saturation mobility of 7.1 cm 2 V −1 s −1 and large current on/off ratio of >10 7 . As a result, the phototransistor exhibits high performance towards NIR light sensing with a responsivity of 200 A W −1 , a specific detectivity of 1.2 × 10 13 Jones, and fast photoresponse with rise/ fall time of 5/120 ms. Remarkably, the hybrid phototransistor, without any passivation, demonstrates excellent electrical stability without performance degradation even after 160 days in air. A 10 × 10 phototransistor array is also enabled by virtue of the high device uniformity. Lastly, flexible In 2 O 3 /PTPBT-ET phototransistor on polyimide substrate is attained, exhibiting outstanding mechanical flexibility up to 1000 bending/releasing cycles at a bending radius of 5 mm. These achievements pave the way for constructing air-stable hybrid phototransistors for flexible NIR image sensor applications.

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“…[ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ] A variety of device prototypes have been devised and demonstrated excellent performance and remarkable application potential. [ 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 ] However, the prerequisite of industrial applications of 2D materials is the fabrication of large‐area high‐quality single crystals, which would possess superior intrinsic properties and high homogeneity to meet the demands of high‐performance devices integration. Therefore, the preparation of single‐crystal 2D materials is of great significance for their practical applications.…”

Section: Introductionmentioning

confidence: 99%

Epitaxy of 2D Materials toward Single Crystals

et al. 2022

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Two‐dimensional (2D) materials exhibit unique electronic, optical, magnetic, mechanical, and thermal properties due to their special crystal structure and thus have promising potential in many fields, such as in electronics and optoelectronics. To realize their real applications, especially in integrated devices, the growth of large‐size single crystal is a prerequisite. Up to now, the most feasible way to achieve 2D single crystal growth is the epitaxy: growth of 2D materials of one or more specific orientations with single‐crystal substrate. Only when the 2D domains have the same orientation, they can stitch together seamlessly and single‐crystal 2D films can be obtained. In this view, four different epitaxy modes of 2D materials on various substrates are presented, including van der Waals epitaxy, edge epitaxy, step‐guided epitaxy, and in‐plane epitaxy focusing on the growth of graphene, hexagonal boron nitride (h‐BN), and transition metal dichalcogenide (TMDC). The lattice symmetry relation and the interaction between 2D materials and the substrate are the key factors determining the epitaxy behaviors and thus are systematically discussed. Finally, the opportunities and challenges about the epitaxy of 2D single crystals in the future are summarized.

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Enhanced photoresponse of TiO2/MoS2 heterostructure phototransistors by the coupling of interface charge transfer and photogating

Cited by 31 publications

References 79 publications

High-sensitivity CdTe phototransistors with the response spectrum extended to 1.65 μm

High-sensitivity CdTe phototransistors with the response spectrum extended to 1.65 μm

Flexible and Air‐Stable Near‐Infrared Sensors Based on Solution‐Processed Inorganic–Organic Hybrid Phototransistors

Epitaxy of 2D Materials toward Single Crystals

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