Enhanced photon lifetime in silicon nanowire arrays and increased efficiency of optical processes in them

Efimova, A. I.; Eliseev, Andrei A.; Georgobiani, Veronika A.; Kholodov, M.; Kolchin, A. V.; Presnov, D. E.; Tkachenko, Natalie; Zabotnov, S. V.; Golovan, L. A.; Кашкаров, П. К.

doi:10.1007/s11082-016-0495-0

Cited by 14 publications

(2 citation statements)

References 16 publications

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“…[ 13 ] A many‐fold increase in the line intensity of SiNWs compared with that of c‐Si substrate can be explained by a partial localization of the excitation light in SiNW arrays. [ 14 ] Both the intensity and line shape of SiNWs do not change after TA that evidences the same morphology of the nanowires in agreement with the SEM data (Figure 1b,c and Figures S1 and S2). A weak background of the Raman spectra in Figure 2a can be related to the photoluminescence (PL) of small Si nanocrystals located on the walls of SiNWs.…”

Section: Resultssupporting

confidence: 87%

Effect of annealing temperature on thermo‐diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy

Efimova

Lipkova

Gonchar

et al. 2020

J Raman Spectroscopy

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Arrays of silicon nanowires (SiNWs) with characteristic transverse nanowire size of the order of 100 nm were fabricated by metal‐assisted chemical etching of monocrystalline silicon wafers followed by thermo‐diffusional doping with boron and studied by means of Raman spectroscopy considering the Fano effect related to the free charge carriers (holes) in SiNWs. The hole concentration of the order of 1020 cm−3 was shown to be achieved for SiNWs annealed at 950–1000°C and the peak intensity of Raman scattering of SiNWs dropped exponentially with the increasing free‐hole concentration. The obtained results can be used for the express diagnostics of the electrical properties of silicon nanostructures for applications in optoelectronics, sensorics, and thermoelectric devices.

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Section: Resultssupporting

confidence: 87%

Effect of annealing temperature on thermo‐diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy

Efimova

Lipkova

Gonchar

et al. 2020

J Raman Spectroscopy

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“…SiNW arrays fabricated via a metal-assisted chemical etching technique [46] contain SiNWs of about 100 nm in diameter and up to 100 µm in length which demonstrate strong scattering and high absorption of visible and near-infrared light [47,48]. Ablation threshold of SiNWs is up to eight times lower than in crystalline silicon [34,35], which increases product yield and reduces the estimated production cost.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of Enhancement of Superficial Tumor Laser Hyperthermia with Silicon Nanoparticles

et al. 2021

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Biodegradable and low-toxic silicon nanoparticles (SiNPs) have potential in different biomedical applications. Previous experimental studies revealed the efficiency of some types of SiNPs in tumor hyperthermia. To analyse the feasibility of employing SiNPs produced by the laser ablation of silicon nanowire arrays in water and ethanol as agents for laser tumor hyperthermia, we numerically simulated effects of heating a millimeter-size nodal basal-cell carcinoma with embedded nanoparticles by continuous-wave laser radiation at 633 nm. Based on scanning electron microscopy data for the synthesized SiNPs size distributions, we used Mie theory to calculate their optical properties and carried out Monte Carlo simulations of light absorption inside the tumor, with and without the embedded nanoparticles, followed by an evaluation of local temperature increase based on the bioheat transfer equation. Given the same mass concentration, SiNPs obtained by the laser ablation of silicon nanowires in ethanol (eSiNPs) are characterized by smaller absorption and scattering coefficients compared to those synthesized in water (wSiNPs). In contrast, wSiNPs embedded in the tumor provide a lower overall temperature increase than eSiNPs due to the effect of shielding the laser irradiation by the highly absorbing wSiNPs-containing region at the top of the tumor. Effective tumor hyperthermia (temperature increase above 42 °C) can be performed with eSiNPs at nanoparticle mass concentrations of 3 mg/mL and higher, provided that the neighboring healthy tissues remain underheated at the applied irradiation power. The use of a laser beam with the diameter fitting the size of the tumor allows to obtain a higher temperature contrast between the tumor and surrounding normal tissues compared to the case when the beam diameter exceeds the tumor size at the comparable power.

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Nonlinear Optics with Porous Silicon

Golovan¹

2017

Handbook of Porous Silicon

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Enhanced photon lifetime in silicon nanowire arrays and increased efficiency of optical processes in them

Cited by 14 publications

References 16 publications

Effect of annealing temperature on thermo‐diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy

Effect of annealing temperature on thermo‐diffusional boron doping of silicon nanowire arrays probed by Raman spectroscopy

Numerical Simulation of Enhancement of Superficial Tumor Laser Hyperthermia with Silicon Nanoparticles

Nonlinear Optics with Porous Silicon

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