Enhanced photoluminescence of heavily n-doped germanium

Kurdi, M. El; Kociniewski, T.; Ngo, T.-P.; Boulmer, J.; Débarre, D.; Boucaud, P.; Damlencourt, J.-F.; Kermarrec, O.; Bensahel, D.

doi:10.1063/1.3138155

Cited by 126 publications

(90 citation statements)

References 14 publications

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“…10(d). As a result, an enhancement of PL intensity more than one order of magnitude was obtained for the n-type doping as high as 10 19 cm −3 [51,52]. Furthermore, such an n-type tensile-strained Ge revealed an optical gain [53].…”

Section: Prospects For On-chip Light Sourcesmentioning

confidence: 73%

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

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Section: Prospects For On-chip Light Sourcesmentioning

confidence: 73%

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

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“…To achieve this goal, donor implantation has been pursued by several groups, 2-8 while other authors emphasize the advantages of in-situ doping. [9][10][11][12][13][14][15][16][17][18][19] Regardless of the specific approach, the implicit assumption underlying this quest is that germanium deviates strongly from the incomplete donor ionization predicted when the doping level is so high that E d -l ) k B T is no longer valid (Here, E d is the donor energy level, l the Fermi level, k B Boltzmann's constant, and T the absolute temperature). Otherwise, a carrier concentration of 5 Â 10 19 cm À3 at room temperature would be unattainable, since it would require an atomic donor concentration of 2 Â 10 21 cm…”

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confidence: 99%

Frustrated incomplete donor ionization in ultra-low resistivity germanium films

Senaratne

Kouvetakis

et al. 2014

Applied Physics Letters

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The relationship between carrier concentration and donor atomic concentration has been determined in n-type Ge films doped with P. The samples were carefully engineered to minimize non-active dopant incorporation by using specially designed P(SiH3)3 and P(GeH3)3 hydride precursors. The in situ nature of the doping and the growth at low temperatures, facilitated by the Ge3H8 and Ge4H10 Ge sources, promote the creation of ultra-low resistivity films with flat doping profiles that help reduce the errors in the concentration measurements. The results show that Ge deviates strongly from the incomplete ionization expected when the donor atomic concentration exceeds Nd = 1017 cm−3, at which the energy separation between the donor and Fermi levels ceases to be much larger than the thermal energy. Instead, essentially full ionization is seen even at the highest doping levels beyond the solubility limit of P in Ge. The results can be explained using a model developed for silicon by Altermatt and coworkers, provided the relevant model parameter is properly scaled. The findings confirm that donor solubility and/or defect formation, not incomplete ionization, are the major factors limiting the achievement of very high carrier concentrations in n-type Ge. The commercially viable chemistry approach applied here enables fabrication of supersaturated and fully ionized prototypes with potential for broad applications in group-IV semiconductor technologies.

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“…[4][5][6] To obtain this emission, it requires the application of a tensile strain of under 2% to the Ge film, 7,8 a high pumping level, high temperature, and a n-type doping of Ge to compensate the 0.136 eV difference in energy between ⌫ and L valleys. 9 In one report, in order to increase the electron fraction of ⌫ valley and to move the Fermi level upwards, 6 the pump power was raised to 360 mW at room temperature.…”

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confidence: 99%

High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate

Tang

Chang

Hudait

et al. 2011

Applied Physics Letters

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High-quality epitaxial Ge films were grown on GaAs substrates by ultrahigh vacuum chemical vapor deposition. High crystallinity and smooth surface were observed for these films by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Direct band gap emission (1550 nm) from this structure was detected by photoluminescence. Valence band offset of 0.16 eV at the Ge/GaAs interface was measured by x-ray photoelectron spectroscopy. N-type arsenic self-doping of 1018/cm−3 in the grown Ge layers was determined using electrochemical capacitance voltage measurement. This structure can be used to fabricate p-channel metal-oxide-semiconductor field-effect transistor for the integration of Ge p-channel device with GaAs n-channel electronic device.

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Enhanced photoluminescence of heavily n-doped germanium

Cited by 126 publications

References 14 publications

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Frustrated incomplete donor ionization in ultra-low resistivity germanium films

High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate

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