Enhanced photoluminescence from GaN grown by lateral confined epitaxy

Zamir, S.; Meyler, B.; Salzman, J.; Wu, Feng; Golan, Yuval

doi:10.1063/1.1432115

Cited by 14 publications

(21 citation statements)

References 10 publications

(12 reference statements)

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“…Thus, it is likely that a poor material quality is the reason for cracks in their experiments. They also observed an enhancement in PL intensity for smallersized fields and correlated this with an enhanced quality of the layer [76,77].…”

Section: Thick Layers and Strain Engineeringmentioning

confidence: 76%

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Dadgar

Strittmatter

Bläsing

et al. 2003

phys. stat. sol. (c)

126

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GaN growth on Si is very attractive for low-cost optoelectronics and high-frequency, high-power electronics. It also opens a route towards an integration with Si electronics. Early attempts to grow GaN on Si suffered from large lattice and thermal mismatch and the strong chemical reactivity of Ga and Si at elevated temperatures. The latter problem can be easily solved using gallium-free seed layers as nitrided AlAs and AlN. The key problem for device structure growth on Si is the thermal mismatch leading to cracks for layer thicknesses above 1 µm. Meanwhile, several concepts for strain engineering exist as patterning, Al(Ga)N/GaN superlattices, and low-temperature (LT) AlN interlayers which enable the growth of device-relevant GaN thicknesses. The high dislocation density in the heteropitaxial films can be reduced by several methods which are based on lateral epitaxial overgrowth using ex-situ masking or patterning and by in-situ methods as masking with monolayer thick SiN. With the latter method in combination with strain engineering by LT-AlN interlayers dislocation densities around 109 cm -2 can be achieved for 2.5 µm thick device structures.

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Section: Thick Layers and Strain Engineeringmentioning

confidence: 76%

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Dadgar

Strittmatter

Bläsing

et al. 2003

phys. stat. sol. (c)

126

View full text Add to dashboard Cite

show abstract

“…Thus, it is likely that a poor material quality is the reason for cracks in their experiments. They also observed an enhancement in PL intensity for smaller-sized fields and correlated this with an enhanced quality of the layer [40,41].…”

Section: Introductionmentioning

confidence: 90%

GaN-Based Devices on Si

Krost¹,

Dadgar²

2002

phys. stat. sol. (a)

181

111

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Nowadays, GaN‐based devices are usually grown on sapphire or silicon‐carbide substrates. These are either insulating or very expensive and not available in large diameter. A well‐conducting low‐cost alternative is silicon also enabling the integration of optoelectronics or high‐power electronics with Si‐based electronics. The main problem limiting a fast progress of GaN growth on silicon is the thermal mismatch of GaN and Si leading to cracks even below device‐relevant layer thicknesses. In the last few years, since the first demonstration of a molecular beam epitaxy grown GaN‐based light emitting diode on Si in 1998 the activities in research of GaN on Si increased dramatically. Meanwhile, several concepts to lower stress, avoid cracks, and improve the material quality exist. Meanwhile the material quality has improved significantly and is about as good as on sapphire so that it is only a question of time until GaN‐based devices on Si come into market. This article gives a review on the latest developments in group‐III nitride growth on Si by metal organic vapor phase epitaxy.

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“…Thus i t i s l ikel y tha t a p oor materi al qua l i ty i s the reason for cra cks. They a lso observe an enhancem ent i n PL i ntensi ty for sm al ler sized Ùelds and correl ate thi s wi th an enha nced qual i ty of the l ayer [24,25]. D adg ar and co-workers ha ve dem onstra ted 2.5 ñ m thi ck cra ck-f ree G aN l ayers on 3 0 0 3 0 0 m m 2 wi th a sim i l ar techni que [26].…”

Section: Stress Cont Rol By Select I Ve Area Gro Wth On Pat Ter Ned Smentioning

confidence: 99%