Enhanced photoemission from surface modulated GaAs:Ge

Sultan, M. T.; Árnason, Hákon Örn; Kateb, Movaffaq; Manolescu, Andrei; Svavarsson, H. G.; Valfells, Á.

doi:10.1002/nano.202100012

Cited by 3 publications

References 53 publications

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Exploring optoelectronic properties of C-doped GaAs for photocathode application from first-principles calculation

Guo

Shi²,

Zhang

et al. 2022

AIP Advances

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In the preparation process of negative electron affinity GaAs photocathodes, the p-type doped property is beneficial to photoemission, and the doping element is usually Be or Zn. In fact, C-doped GaAs material has been widely used due to its high activation rate, extremely low diffusion coefficient, and good thermal stability, whereas the influence mechanism of the C dopant on the performance of the GaAs photocathode is still unclear. In order to investigate the substitutional effect on C-doped GaAs, electronic structures and optical properties along with angular distribution of emitted photoelectrons are obtained by utilizing first-principles calculation based on density functional theory. The results show that C-doped GaAs is more likely to form a p-type doped feature in which the C dopant forms new levels in the forbidden band and reduces the energy gap as well as increasing the absorption coefficient and decreasing the reflectivity in the visible light band. In addition, the electrons emitted from the Γ-valley for C-doped GaAs have better directivity than those for pure GaAs, which is mainly ascribed to the smaller effective electron mass in the Γ-valley.

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Exploring optoelectronic properties of C-doped GaAs for photocathode application from first-principles calculation

Guo

Shi²,

Zhang

et al. 2022

AIP Advances

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Cs/O co-adsorption on C-doped GaAs surface: From first-principles simulation to experiment

Guo

Shi²,

Zhang³

et al. 2023

AIP Advances

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C-doped GaAs is considered a potential material for negative electron affinity photocathodes, where the p-type doped property is beneficial to photoemission. To clarify the stability and efficiency during Cs/O activation, the gradient concentration of Cs adsorption and Cs/O co-adsorption models of C-doped GaAs are established. The work function, adsorption energy, and surface dipole moment are intensified by first principles calculation based on density functional theory. Experimental results demonstrate that Cs/O activation effectively enhances the performance of C-doped GaAs photocathodes, resulting in high levels of quantum efficiency. Therefore, we conclude that C-doped GaAs photocathodes have the potential to significantly improve the photoelectric emission performance and stability of GaAs photocathodes, making them a viable candidate for future applications.

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