Enhanced photoelectroctatlytic performance of etched 3C–SiC thin film for water splitting under visible light

Abstract

A low temperature alternating supply epitaxy grown p-type 3C–SiC thin film is further etched to enhance the photoelectrocatalytic performance.

Photocatalytic C–X borylation of aryl halides by hierarchical SiC nanowire-supported Pd nanoparticles

“…Hierarchical SiC nanowires (Fig. S2) were employed to support Pd nanoparticles, because the hierarchical structure promotes an increase in light absorption and specific surface area, as well as a reduction in the recombination rate of photoelectron and holes, thus improving the photocatalytic activity [57,58]. The transmission electron microscopy (TEM) images of Pd/SiC (Fig.…”

Electrodeposition of Cu2O/g-C3N4 heterojunction film on an FTO substrate for enhancing visible light photoelectrochemical water splitting

“…In the past several decades, photoelectrochemical (PEC) hydrogen evolution from water using semiconductors as photocatalyst has attracted extensive attention because it is a promising clean and renewable energy technology [1][2][3][4][5]. Among the various semiconductors, p-type cuprous oxide (Cu2O) is one of the most promising visible light PEC materials for water splitting [6][7][8].…”

Orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress

“…Aluminum was employed as the dopant in the in situ doping process where trimethylaluminum [(CH 3 ) 3 Al, TMAl] was the precursor to form p-type 3C-SiC. The properties of the grown single crystalline 3C-SiC films were characterized and reported elsewhere 26,27 . The X-ray diffraction (XRD) measurement indicated that the SiC film is epitaxially grown on Si (100) substrate, Fig.…”

“…The properties of the grown single crystalline 3C-SiC lms were characterized and reported elsewhere. 26,27 The X-ray diffraction (XRD) measurement indicated that the SiC lm is epitaxially grown on Si (100) substrate, Fig. 1(a).…”