Enhanced photocurrent ZnO/CdS/CuInSe2 solar cells

Potter, R. R.

doi:10.1016/0379-6787(86)90107-9

Cited by 43 publications

(11 citation statements)

References 3 publications

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“…Zinc oxide (ZnO) is an interesting wide band gap (~3.3 eV) II-VI semiconductor because exhibits numerous characteristics suited for various technological applications such as antireflection coatings, transparent electrodes in solar cells [1], piezoelectric devices [2],gas sensors [3], varistors [4], UV and blue light emitters [5] and even thin film transistors [6]. It is also being considered as a potential candidate in the new frontiers of research like spintronics [7].…”

Section: Introductionmentioning

confidence: 99%

Optical and Structural Properties of ZnO Thin Films Fabricated by SILAR Method

Sarma¹,

Chakrabortty²,

Sarma³

2014

IJIRSET

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ABSTRACT:A novel and simple chemical route was used for the deposition of ZnO thin film from aqueous solution of zinc-ammonia complex, integrating the merits of successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition methods. ZnO thin films on glass substrates were deposited with the precursor of zincammonia complex. Characterization techniques of XRD, SEM, EDAX and DRS are used to characterize ZnO thin films. X-ray diffraction study show that the film prepared in this work exhibits good crystallinity with the hexagonal wurtzite crystalline structure and the preferential orientation along (0 0 2) plane, with a texture coefficient value of ~2.56, average crystallite size of 28.92 nm and with lattice constants a = b = 3.257 Å, c = 5.215 Å. EDAX spectrum indicates that the film consists of zinc and oxygen elements. The optical band gap energy of the thin films is calculated from optical absorption spectrometry using DRS data and the value was found to be direct allowed transition ~3.22 eV.

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Section: Introductionmentioning

confidence: 99%

Optical and Structural Properties of ZnO Thin Films Fabricated by SILAR Method

Sarma¹,

Chakrabortty²,

Sarma³

2014

IJIRSET

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“…The blueshift seen in the absorption edge as the B content is increased can mainly be attributed to the Burstein-Moss effect resulting from the increase of carrier concentration. It has been reported that BZO films are suitable for use as the transparent electrode in CIGS solar cells, which respond to near infrared light at wavelengths up to approximately 1.3 m. [20][21][22] As an example, Fig. 5 shows a typical optical transmission spectrum for a BZO thin film with a thickness of approximately 500 nm, prepared with a B content of 1 at.…”

Section: A Doping Effects Of Boronmentioning

confidence: 99%

Preparation of transparent conducting B-doped ZnO films by vacuum arc plasma evaporation

Miyata

Honma

Minami

2007

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Zinc oxide (ZnO) in the form of thin films is a transparent II-VI compound semiconductor with excellent properties and has been used extensively in various optoelectronics and microelectronic applications such as antireflection coatings (ARCs), transparent electrodes in solar cells [1][2][3], piezoelectric devices [4], gas sensors [5], optical wave guide [6], UV /blue light emitters [7], surface acoustic wave devices [8] and even thin film transistors [9,10].…”

Section: Introductionmentioning

confidence: 99%