2015
DOI: 10.1021/am508177p
|View full text |Cite
|
Sign up to set email alerts
|

Enhanced Performance Using an SU-8 Dielectric Interlayer in a Bulk Heterojunction Organic Solar Cell

Abstract: The effect of inserting an SU-8 dielectric interlayer into inverted bulk heterojunction (BHJ) organic solar cells (OSCs) was studied. Insertion of an ultrathin layer of SU-8 between the zinc oxide (ZnO) electron transport layer and the photoactive layer resulted in a smoother interface and a 14% enhancement in power conversion efficiency. The properties of devices with and without an SU-8 interlayer were investigated using transient photovoltage (TPV) and double injection (DoI) techniques, and it was found tha… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
6
0

Year Published

2015
2015
2021
2021

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 11 publications
(6 citation statements)
references
References 46 publications
(66 reference statements)
0
6
0
Order By: Relevance
“…Inspiringly, some efforts from the independent groups have been devoted to solving these problems. , Ultraviolet (UV) treatment is a common method to eliminate the s-shaped J – V curve and enhance the performance of i-PSCs with ZnO. , Reportedly, the surface of ZnO was treated by UV irradiation to passivate the surface defects and thus decrease the carrier recombination rate at the ZnO/active layer interface, leading to increased conductivity of the ZnO layer . However, long time UV irradiation easily damages the organic active layer, which inevitably impacts the device efficiency and stability .…”
Section: Introductionmentioning
confidence: 99%
“…Inspiringly, some efforts from the independent groups have been devoted to solving these problems. , Ultraviolet (UV) treatment is a common method to eliminate the s-shaped J – V curve and enhance the performance of i-PSCs with ZnO. , Reportedly, the surface of ZnO was treated by UV irradiation to passivate the surface defects and thus decrease the carrier recombination rate at the ZnO/active layer interface, leading to increased conductivity of the ZnO layer . However, long time UV irradiation easily damages the organic active layer, which inevitably impacts the device efficiency and stability .…”
Section: Introductionmentioning
confidence: 99%
“…This enhancement could be due to the improved interfacial interaction between the active layer and Al-SG cathode. The improved interfacial interaction reduces interfacial trap states and hence reduced surface charge accumulation, since reduced interfacial trap state density and improved electronic coupling between Al-SG cathode with P3HT:PC 61 BM leads to improved PCE. , Moreover, reduced series resistance of device-B is suggested as the reason for improved J SC and FF . These increased FF also suggests the better physical interface in Al-SG devices for charge transfer.…”
Section: Photovoltaic Propertiesmentioning
confidence: 98%
“…Through transient photovoltage (TPV) spectroscopy and double injection (DoI) techniques, it was found that SU‐8 increased the carrier lifetime from 0.1 to 0.3 ms and induced similar mobility to the SU‐8‐free device. [ 65 ] It was indicated that SU‐8 slowed down the charge recombination dynamics, which improved the FF and PCE in the OSCs based on P3HT:PC 61 BM. Interestingly, the device with SU‐8 interlayer showed increased FF and retained 85% of the original PCE after 33‐week storage in ambient conditions due to the encapsulation effect of insulating SU‐8.…”
Section: The Progress In I‐oscsmentioning
confidence: 99%