2015
DOI: 10.1016/j.orgel.2015.05.008
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Enhanced performance of layer-evolved bulk-heterojunction solar cells with Ag nanoparticles by sequential deposition

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Cited by 8 publications
(10 citation statements)
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References 42 publications
(55 reference statements)
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“…59 Comparable improved nanoscale phase separation was also demonstrated by Ahn et al, with controlled penetration of the acceptor through adjustment of the DCM:DCB cosolvent ratio for PC 61 BM. 177 Cosolvents also facilitate interdiffusion by optimizing the degree of polymer swelling (without dissolving the layer), as reported by Aguirre et al who used a blend of Tol and 2-chlorophenol (2-CP). 167 Solvent additives can also be exploited to tune the vertical phase separation.…”
Section: Lbl Opv Device Fabrication By Sequential Spin Coating Processesmentioning
confidence: 96%
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“…59 Comparable improved nanoscale phase separation was also demonstrated by Ahn et al, with controlled penetration of the acceptor through adjustment of the DCM:DCB cosolvent ratio for PC 61 BM. 177 Cosolvents also facilitate interdiffusion by optimizing the degree of polymer swelling (without dissolving the layer), as reported by Aguirre et al who used a blend of Tol and 2-chlorophenol (2-CP). 167 Solvent additives can also be exploited to tune the vertical phase separation.…”
Section: Lbl Opv Device Fabrication By Sequential Spin Coating Processesmentioning
confidence: 96%
“…1, a8-9) fullerene small molecules, paired with lower band gap conjugated polymers, permitting increased efficiencies up to almost 9%. 23,25,26,30,155,[173][174][175][176][177][178][179][180][181][182][183][184][185][186] Recently, NFAs have been integrated into spin casted bilayer devices, enabling PCEs in excess of 10%. 28,29,44,49,59,123,125,126,129,130,133,[187][188][189][190] One example of a NFA system is PBTB-TFS1 ( Fig.…”
Section: Lbl Opv Device Fabrication By Sequential Spin Coating Processesmentioning
confidence: 99%
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“…The bulk heterojunction device [22][23][24][25] shows improved interfacial area where charge separation occurs as compared to bilayer device. Bulk heterojunction is prepared by bulk volume mixing of donor and acceptor components which results in very small exciton diffusion length at donor-acceptor interface [26].…”
Section: Bulk Heterojunction Devicementioning
confidence: 99%
“…In recent years, different materials have been studied for donor and acceptor [ 133 , 134 ]. Bulk heterojunction structures [ 135 , 136 ]: have a mix of donor and acceptor in the bulk, which improves the interfacial area preventing exciton diffusion [ 137 ]. …”
Section: Introductionmentioning
confidence: 99%