Enhanced oxidation resistance of Mo-modified Si-SiC coating on C/C composites by laser-inducing

The dopant (n- and p-type)-, band gap-, size- and stress-dependent field electron emission of silicon nanowires

“…In the literature, numerous nano/micro-structures, including ZnO, 25 TiO 2 , 26 GaN, 27 AIN, 28 CNTs, 29 and graphene–Si NWs, 30 have been grown and well studied for their field emission properties. Moreover, various efforts have been made to modify the structures to improve their electron field emission performance: Mo-modified Si field emitter, 31 Ni-implanted Si samples, 32 IrO 2 coated on Si nanotips, 33 and TiO 2 nanotubes with emission properties. 34 In addition, AIN-induced EFE is theoretically evaluated, 28 and the EFE of GaAs is also analyzed using theoretical models.…”